Dynamics and fragmentation mechanism of (C5H4CH3)Pt(CH3)3 on SiO2 surfaces

The interaction of trimethyl(methylcyclopentadienyl)platinum(IV) ((C5H4CH3)Pt(CH3)3) molecules on fully and partially hydroxylated SiO2 surfaces, as well as the dynamics of this interaction were investigated using density functional theory (DFT) and finite temperature DFT-based molecular dynamics si...

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Main Authors: Kaliappan Muthukumar, Harald O. Jeschke, Roser Valentí
Format: Article
Language:English
Published: Beilstein-Institut 2018-02-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Online Access:https://doi.org/10.3762/bjnano.9.66
_version_ 1818445876602863616
author Kaliappan Muthukumar
Harald O. Jeschke
Roser Valentí
author_facet Kaliappan Muthukumar
Harald O. Jeschke
Roser Valentí
author_sort Kaliappan Muthukumar
collection DOAJ
description The interaction of trimethyl(methylcyclopentadienyl)platinum(IV) ((C5H4CH3)Pt(CH3)3) molecules on fully and partially hydroxylated SiO2 surfaces, as well as the dynamics of this interaction were investigated using density functional theory (DFT) and finite temperature DFT-based molecular dynamics simulations. Fully and partially hydroxylated surfaces represent substrates before and after electron beam treatment and this study examines the role of electron beam pretreatment on the substrates in the initial stages of precursor dissociation and formation of Pt deposits. Our simulations show that on fully hydroxylated surfaces or untreated surfaces, the precursor molecules remain inactivated while we observe fragmentation of (C5H4CH3)Pt(CH3)3 on partially hydroxylated surfaces. The behavior of precursor molecules on the partially hydroxylated surfaces has been found to depend on the initial orientation of the molecule and the distribution of surface active sites. Based on the observations from the simulations and available experiments, we discuss possible dissociation channels of the precursor.
first_indexed 2024-12-14T19:38:48Z
format Article
id doaj.art-be00de5fbde644acb55c28281c708e7e
institution Directory Open Access Journal
issn 2190-4286
language English
last_indexed 2024-12-14T19:38:48Z
publishDate 2018-02-01
publisher Beilstein-Institut
record_format Article
series Beilstein Journal of Nanotechnology
spelling doaj.art-be00de5fbde644acb55c28281c708e7e2022-12-21T22:49:45ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862018-02-019171172010.3762/bjnano.9.662190-4286-9-66Dynamics and fragmentation mechanism of (C5H4CH3)Pt(CH3)3 on SiO2 surfacesKaliappan Muthukumar0Harald O. Jeschke1Roser Valentí2Institut für Theoretische Physik, Goethe-Universität, Max-von-Laue-Straße 1, 60438 Frankfurt am Main, GermanyResearch Institute for Interdisciplinary Science, Okayama University, 3-1-1 Tsushima-naka, Kita-ku, Okayama 700-8530, JapanInstitut für Theoretische Physik, Goethe-Universität, Max-von-Laue-Straße 1, 60438 Frankfurt am Main, GermanyThe interaction of trimethyl(methylcyclopentadienyl)platinum(IV) ((C5H4CH3)Pt(CH3)3) molecules on fully and partially hydroxylated SiO2 surfaces, as well as the dynamics of this interaction were investigated using density functional theory (DFT) and finite temperature DFT-based molecular dynamics simulations. Fully and partially hydroxylated surfaces represent substrates before and after electron beam treatment and this study examines the role of electron beam pretreatment on the substrates in the initial stages of precursor dissociation and formation of Pt deposits. Our simulations show that on fully hydroxylated surfaces or untreated surfaces, the precursor molecules remain inactivated while we observe fragmentation of (C5H4CH3)Pt(CH3)3 on partially hydroxylated surfaces. The behavior of precursor molecules on the partially hydroxylated surfaces has been found to depend on the initial orientation of the molecule and the distribution of surface active sites. Based on the observations from the simulations and available experiments, we discuss possible dissociation channels of the precursor.https://doi.org/10.3762/bjnano.9.66depositiondissociationelectron beam induced deposition (EBID)focused electron beam induced deposition (FEBID)precursortrimethyl(methylcyclopentadienyl)platinum(IV) ((CH3-C5H4)Pt(CH3)3)
spellingShingle Kaliappan Muthukumar
Harald O. Jeschke
Roser Valentí
Dynamics and fragmentation mechanism of (C5H4CH3)Pt(CH3)3 on SiO2 surfaces
Beilstein Journal of Nanotechnology
deposition
dissociation
electron beam induced deposition (EBID)
focused electron beam induced deposition (FEBID)
precursor
trimethyl(methylcyclopentadienyl)platinum(IV) ((CH3-C5H4)Pt(CH3)3)
title Dynamics and fragmentation mechanism of (C5H4CH3)Pt(CH3)3 on SiO2 surfaces
title_full Dynamics and fragmentation mechanism of (C5H4CH3)Pt(CH3)3 on SiO2 surfaces
title_fullStr Dynamics and fragmentation mechanism of (C5H4CH3)Pt(CH3)3 on SiO2 surfaces
title_full_unstemmed Dynamics and fragmentation mechanism of (C5H4CH3)Pt(CH3)3 on SiO2 surfaces
title_short Dynamics and fragmentation mechanism of (C5H4CH3)Pt(CH3)3 on SiO2 surfaces
title_sort dynamics and fragmentation mechanism of c5h4ch3 pt ch3 3 on sio2 surfaces
topic deposition
dissociation
electron beam induced deposition (EBID)
focused electron beam induced deposition (FEBID)
precursor
trimethyl(methylcyclopentadienyl)platinum(IV) ((CH3-C5H4)Pt(CH3)3)
url https://doi.org/10.3762/bjnano.9.66
work_keys_str_mv AT kaliappanmuthukumar dynamicsandfragmentationmechanismofc5h4ch3ptch33onsio2surfaces
AT haraldojeschke dynamicsandfragmentationmechanismofc5h4ch3ptch33onsio2surfaces
AT roservalenti dynamicsandfragmentationmechanismofc5h4ch3ptch33onsio2surfaces