Enhanced dielectric response and non-Ohmic properties of Ge-doped CaTiO3/CaCu3Ti4O12
We present a method for increasing the dielectric constant of CaTiO3/CaCu3Ti4O12 (CTO/CCTO) composites and retaining a low-loss tangent (tanδ) by doping with Ge dopant. The Ge-doped CTO/CCTO composites were fabricated using a one-step processing method. The phase composition and microstructure analy...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2022-04-01
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| Series: | Journal of Asian Ceramic Societies |
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| Online Access: | https://www.tandfonline.com/doi/10.1080/21870764.2022.2072569 |
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| author | Jirata Prachamon Jakkree Boonlakhorn Narong Chanlek Nutthakritta Phromviyo Viyada Harnchana Pornjuk Srepusharawoot Ekaphan Swatsitang Prasit Thongbai |
| author_facet | Jirata Prachamon Jakkree Boonlakhorn Narong Chanlek Nutthakritta Phromviyo Viyada Harnchana Pornjuk Srepusharawoot Ekaphan Swatsitang Prasit Thongbai |
| author_sort | Jirata Prachamon |
| collection | DOAJ |
| description | We present a method for increasing the dielectric constant of CaTiO3/CaCu3Ti4O12 (CTO/CCTO) composites and retaining a low-loss tangent (tanδ) by doping with Ge dopant. The Ge-doped CTO/CCTO composites were fabricated using a one-step processing method. The phase composition and microstructure analyses confirmed the existence of CTO and CCTO phases, in which Ge doping ions can be substituted into both phases. The mean grain sizes of the two phases were slightly reduced by decreasing the porosity. Doping the CTO/CCTO with Ge doping ions resulted in a high dielectric constant by ~ two times, while a very low tanδ value of ~0.01 did not change. Furthermore, the dielectric constant changed by less than ±15% in the temperature range of −60 – 150°C. The nonlinear current density–electric field properties of CTO/CCTO can also be enhanced. Impedance spectroscopy showed a heterogeneous microstructure with enhanced grain boundary properties after doping with Ge dopants, giving rise to enhanced nonlinear electrical properties. The decreased grain resistivity due to Ge substitution is confirmed to originate from the increase in the Ti3+/Ti4+ ratio, which was analyzed using X–ray photoelectron spectroscopy . |
| first_indexed | 2024-04-12T08:18:03Z |
| format | Article |
| id | doaj.art-be15f72cec9f4f68853c457d80be99cc |
| institution | Directory Open Access Journal |
| issn | 2187-0764 |
| language | English |
| last_indexed | 2024-04-12T08:18:03Z |
| publishDate | 2022-04-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Journal of Asian Ceramic Societies |
| spelling | doaj.art-be15f72cec9f4f68853c457d80be99cc2022-12-22T03:40:42ZengTaylor & Francis GroupJournal of Asian Ceramic Societies2187-07642022-04-0110247348110.1080/21870764.2022.2072569Enhanced dielectric response and non-Ohmic properties of Ge-doped CaTiO3/CaCu3Ti4O12Jirata Prachamon0Jakkree Boonlakhorn1Narong Chanlek2Nutthakritta Phromviyo3Viyada Harnchana4Pornjuk Srepusharawoot5Ekaphan Swatsitang6Prasit Thongbai7Giant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandSynchrotron Light Research Institute (Public Organization), Nakhon Ratchasima, ThailandResearch and Innovation, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandGiant Dielectric and Computational Design Research Group (GD–CDR), Department of Physics, Faculty of Science, Khon Kaen University, Khon Kaen, ThailandWe present a method for increasing the dielectric constant of CaTiO3/CaCu3Ti4O12 (CTO/CCTO) composites and retaining a low-loss tangent (tanδ) by doping with Ge dopant. The Ge-doped CTO/CCTO composites were fabricated using a one-step processing method. The phase composition and microstructure analyses confirmed the existence of CTO and CCTO phases, in which Ge doping ions can be substituted into both phases. The mean grain sizes of the two phases were slightly reduced by decreasing the porosity. Doping the CTO/CCTO with Ge doping ions resulted in a high dielectric constant by ~ two times, while a very low tanδ value of ~0.01 did not change. Furthermore, the dielectric constant changed by less than ±15% in the temperature range of −60 – 150°C. The nonlinear current density–electric field properties of CTO/CCTO can also be enhanced. Impedance spectroscopy showed a heterogeneous microstructure with enhanced grain boundary properties after doping with Ge dopants, giving rise to enhanced nonlinear electrical properties. The decreased grain resistivity due to Ge substitution is confirmed to originate from the increase in the Ti3+/Ti4+ ratio, which was analyzed using X–ray photoelectron spectroscopy .https://www.tandfonline.com/doi/10.1080/21870764.2022.2072569Ceramic matrix compositegiant dielectric permittivitynonlinear current-voltage characteristicvaristorcapacitor |
| spellingShingle | Jirata Prachamon Jakkree Boonlakhorn Narong Chanlek Nutthakritta Phromviyo Viyada Harnchana Pornjuk Srepusharawoot Ekaphan Swatsitang Prasit Thongbai Enhanced dielectric response and non-Ohmic properties of Ge-doped CaTiO3/CaCu3Ti4O12 Journal of Asian Ceramic Societies Ceramic matrix composite giant dielectric permittivity nonlinear current-voltage characteristic varistor capacitor |
| title | Enhanced dielectric response and non-Ohmic properties of Ge-doped CaTiO3/CaCu3Ti4O12 |
| title_full | Enhanced dielectric response and non-Ohmic properties of Ge-doped CaTiO3/CaCu3Ti4O12 |
| title_fullStr | Enhanced dielectric response and non-Ohmic properties of Ge-doped CaTiO3/CaCu3Ti4O12 |
| title_full_unstemmed | Enhanced dielectric response and non-Ohmic properties of Ge-doped CaTiO3/CaCu3Ti4O12 |
| title_short | Enhanced dielectric response and non-Ohmic properties of Ge-doped CaTiO3/CaCu3Ti4O12 |
| title_sort | enhanced dielectric response and non ohmic properties of ge doped catio3 cacu3ti4o12 |
| topic | Ceramic matrix composite giant dielectric permittivity nonlinear current-voltage characteristic varistor capacitor |
| url | https://www.tandfonline.com/doi/10.1080/21870764.2022.2072569 |
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