Test Structure Design for Defect Detection during Active Thermal Cycling
Integrated power ICs acting as smart power switches for automotive or industrial applications are often subjected to active thermal cycling. Consequently, they undergo significant self-heating and are prone to various failure mechanisms related to the electro-thermo-mechanical phenomena that take pl...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-09-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/22/19/7223 |
| _version_ | 1797476975980314624 |
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| author | Ciprian Florea Dan Simon Adrian Bojiță Marius Purcar Cristian Boianceanu Vasile Țopa |
| author_facet | Ciprian Florea Dan Simon Adrian Bojiță Marius Purcar Cristian Boianceanu Vasile Țopa |
| author_sort | Ciprian Florea |
| collection | DOAJ |
| description | Integrated power ICs acting as smart power switches for automotive or industrial applications are often subjected to active thermal cycling. Consequently, they undergo significant self-heating and are prone to various failure mechanisms related to the electro-thermo-mechanical phenomena that take place in the device metallization. In this article a test structure consisting of a lateral DMOS transistor equipped with several integrated sensors is proposed for metallization fatigue assessment. The design of the test structure is presented in detail, alongside with design considerations drawn from the literature and from simulation results. The testing procedure is then described, and experimental results are discussed. The experimental data provided by the integrated sensors correlated with the electro-thermal simulation results indicate the emergence of a failure mechanism and this is later confirmed by failure analysis. Conclusions are further drawn regarding the feasibility of using the proposed integrated sensors for monitoring defects in power ICs. |
| first_indexed | 2024-03-09T21:11:26Z |
| format | Article |
| id | doaj.art-be16d5b7903048f0b1a775a6a563f2e3 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-09T21:11:26Z |
| publishDate | 2022-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-be16d5b7903048f0b1a775a6a563f2e32023-11-23T21:45:30ZengMDPI AGSensors1424-82202022-09-012219722310.3390/s22197223Test Structure Design for Defect Detection during Active Thermal CyclingCiprian Florea0Dan Simon1Adrian Bojiță2Marius Purcar3Cristian Boianceanu4Vasile Țopa5Infineon Technologies Romania & Co. SCS, 020335 Bucharest, RomaniaInfineon Technologies Romania & Co. SCS, 020335 Bucharest, RomaniaElectrotechnics and Measurements Department, Technical University of Cluj-Napoca, 400027 Cluj-Napoca, RomaniaElectrotechnics and Measurements Department, Technical University of Cluj-Napoca, 400027 Cluj-Napoca, RomaniaInfineon Technologies Romania & Co. SCS, 020335 Bucharest, RomaniaElectrotechnics and Measurements Department, Technical University of Cluj-Napoca, 400027 Cluj-Napoca, RomaniaIntegrated power ICs acting as smart power switches for automotive or industrial applications are often subjected to active thermal cycling. Consequently, they undergo significant self-heating and are prone to various failure mechanisms related to the electro-thermo-mechanical phenomena that take place in the device metallization. In this article a test structure consisting of a lateral DMOS transistor equipped with several integrated sensors is proposed for metallization fatigue assessment. The design of the test structure is presented in detail, alongside with design considerations drawn from the literature and from simulation results. The testing procedure is then described, and experimental results are discussed. The experimental data provided by the integrated sensors correlated with the electro-thermal simulation results indicate the emergence of a failure mechanism and this is later confirmed by failure analysis. Conclusions are further drawn regarding the feasibility of using the proposed integrated sensors for monitoring defects in power ICs.https://www.mdpi.com/1424-8220/22/19/7223active thermal cyclingDMOS power transistorsmart power ICfailure mechanismsintegrated sensorsmetallization fatigue |
| spellingShingle | Ciprian Florea Dan Simon Adrian Bojiță Marius Purcar Cristian Boianceanu Vasile Țopa Test Structure Design for Defect Detection during Active Thermal Cycling Sensors active thermal cycling DMOS power transistor smart power IC failure mechanisms integrated sensors metallization fatigue |
| title | Test Structure Design for Defect Detection during Active Thermal Cycling |
| title_full | Test Structure Design for Defect Detection during Active Thermal Cycling |
| title_fullStr | Test Structure Design for Defect Detection during Active Thermal Cycling |
| title_full_unstemmed | Test Structure Design for Defect Detection during Active Thermal Cycling |
| title_short | Test Structure Design for Defect Detection during Active Thermal Cycling |
| title_sort | test structure design for defect detection during active thermal cycling |
| topic | active thermal cycling DMOS power transistor smart power IC failure mechanisms integrated sensors metallization fatigue |
| url | https://www.mdpi.com/1424-8220/22/19/7223 |
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