Ultra-Sensitive PIN-Photodiode Receiver
A monolithically integrated receiver consisting of a low-capacitance PIN photodiode and a photo-charge integrating amplifier in 0.18-<italic>μ</italic>m CMOS is introduced launching a new class of ultra-sensitive optical receivers. The integrated PIN photodiode has a junction...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10135079/ |
| _version_ | 1797810664709816320 |
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| author | Kerstin Schneider-Hornstein Bernhard Goll Horst Zimmermann |
| author_facet | Kerstin Schneider-Hornstein Bernhard Goll Horst Zimmermann |
| author_sort | Kerstin Schneider-Hornstein |
| collection | DOAJ |
| description | A monolithically integrated receiver consisting of a low-capacitance PIN photodiode and a photo-charge integrating amplifier in 0.18-<italic>μ</italic>m CMOS is introduced launching a new class of ultra-sensitive optical receivers. The integrated PIN photodiode has a junction capacitance of 1.5 fF at a light-sensitive diameter of 30 <italic>μ</italic>m, a responsivity of 0.39 A/W at 635 nm, and rise/fall times of 0.73/0.92 ns at a reverse bias of 20 V. The common-source amplifier integrates the photo-charges on the smallest possible integration capacitor, which is a gate-drain overlap capacitance. The data bits are reconstructed by double sampling. In such a way, the sensitivity of SPAD receivers is achieved, however without using any impact ionization. At 50 Mb/s, a sensitivity of −56.4 dBm for a bit error ratio (BER) of 2 × 10<sup>−3</sup> is obtained using a wavelength of 635 nm. |
| first_indexed | 2024-03-13T07:12:13Z |
| format | Article |
| id | doaj.art-be495da02d5844f0a8d54bc6bd4ccca9 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-03-13T07:12:13Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-be495da02d5844f0a8d54bc6bd4ccca92023-06-05T23:00:13ZengIEEEIEEE Photonics Journal1943-06552023-01-011531910.1109/JPHOT.2023.327993510135079Ultra-Sensitive PIN-Photodiode ReceiverKerstin Schneider-Hornstein0https://orcid.org/0000-0002-7669-2192Bernhard Goll1https://orcid.org/0000-0003-2174-8491Horst Zimmermann2https://orcid.org/0000-0003-3221-0769Institute of Electrodynamics, Microwave and Circuit Engineering, Technische Universität Wien, Vienna, AustriaInstitute of Electrodynamics, Microwave and Circuit Engineering, Technische Universität Wien, Vienna, AustriaInstitute of Electrodynamics, Microwave and Circuit Engineering, Technische Universität Wien, Vienna, AustriaA monolithically integrated receiver consisting of a low-capacitance PIN photodiode and a photo-charge integrating amplifier in 0.18-<italic>μ</italic>m CMOS is introduced launching a new class of ultra-sensitive optical receivers. The integrated PIN photodiode has a junction capacitance of 1.5 fF at a light-sensitive diameter of 30 <italic>μ</italic>m, a responsivity of 0.39 A/W at 635 nm, and rise/fall times of 0.73/0.92 ns at a reverse bias of 20 V. The common-source amplifier integrates the photo-charges on the smallest possible integration capacitor, which is a gate-drain overlap capacitance. The data bits are reconstructed by double sampling. In such a way, the sensitivity of SPAD receivers is achieved, however without using any impact ionization. At 50 Mb/s, a sensitivity of −56.4 dBm for a bit error ratio (BER) of 2 × 10<sup>−3</sup> is obtained using a wavelength of 635 nm.https://ieeexplore.ieee.org/document/10135079/CMOS circuitsintegrated optoelectronicsp-i-n photodiodescapacitive-feedback transimpedance amplifier |
| spellingShingle | Kerstin Schneider-Hornstein Bernhard Goll Horst Zimmermann Ultra-Sensitive PIN-Photodiode Receiver IEEE Photonics Journal CMOS circuits integrated optoelectronics p-i-n photodiodes capacitive-feedback transimpedance amplifier |
| title | Ultra-Sensitive PIN-Photodiode Receiver |
| title_full | Ultra-Sensitive PIN-Photodiode Receiver |
| title_fullStr | Ultra-Sensitive PIN-Photodiode Receiver |
| title_full_unstemmed | Ultra-Sensitive PIN-Photodiode Receiver |
| title_short | Ultra-Sensitive PIN-Photodiode Receiver |
| title_sort | ultra sensitive pin photodiode receiver |
| topic | CMOS circuits integrated optoelectronics p-i-n photodiodes capacitive-feedback transimpedance amplifier |
| url | https://ieeexplore.ieee.org/document/10135079/ |
| work_keys_str_mv | AT kerstinschneiderhornstein ultrasensitivepinphotodiodereceiver AT bernhardgoll ultrasensitivepinphotodiodereceiver AT horstzimmermann ultrasensitivepinphotodiodereceiver |