Single event sensitivity analysis of bandgap reference
Based on the conventional design of bandgap reference using 0.18 μm process, the single event transient pulse current model was used to analyze the single event sensitivity of common CMOS two-stage amplifiers. The vertical type PNP transistor used in the bandgap reference was modeled using TCAD soft...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2018-12-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000094706 |
| Summary: | Based on the conventional design of bandgap reference using 0.18 μm process, the single event transient pulse current model was used to analyze the single event sensitivity of common CMOS two-stage amplifiers. The vertical type PNP transistor used in the bandgap reference was modeled using TCAD software, and its single event sensitivity in the bandgap reference source was verified by simulation. In the end, the radiation hardened bandgap reference was proposed. |
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| ISSN: | 0258-7998 |