| Summary: | Numerous studies have addressed the use of perovskite materials for fabricating a wide range of optoelectronic devices. This study employs the deposition of an electron transport layer of C<sub>60</sub> and an Ag electrode on CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub> perovskite crystals to complete a photodetector structure, which exhibits a metal−semiconductor−metal (MSM) type structure. First, CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub> perovskite crystals were grown by inverse temperature crystallization (ITC) in a pre-heated circulator oven. This oven was able to supply uniform heat for facilitating the growth of high-quality and large-area crystals. Second, the different growth temperatures for CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub> perovskite crystals were investigated. The electrical, optical, and morphological characteristics of the perovskite crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy, and photoluminescence (PL). Finally, the CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub> perovskite crystals were observed to form a contact with the Ag/C<sub>60</sub> as the photodetector, which revealed a responsivity of 24.5 A/W.
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