Summary: | Red, green, and blue light In<sub>x</sub>Ga<sub>1−x</sub>N multiple quantum wells have been grown on GaN/γ-LiAlO<sub>2</sub> microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for In<sub>x</sub>Ga<sub>1-x</sub>N multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (In<sub>x</sub>Ga<sub>1-x</sub>N) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful In<sub>x</sub>Ga<sub>1-x</sub>N-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.
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