Optimization of Ternary In<sub>x</sub>Ga<sub>1-x</sub>N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs
Red, green, and blue light In<sub>x</sub>Ga<sub>1−x</sub>N multiple quantum wells have been grown on GaN/γ-LiAlO<sub>2</sub> microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-s...
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MDPI AG
2023-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/13/1922 |
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| author | Yu-Chung Lin Ikai Lo Cheng-Da Tsai Ying-Chieh Wang Hui-Chun Huang Chu-An Li Mitch M. C. Chou Ting-Chang Chang |
| author_facet | Yu-Chung Lin Ikai Lo Cheng-Da Tsai Ying-Chieh Wang Hui-Chun Huang Chu-An Li Mitch M. C. Chou Ting-Chang Chang |
| author_sort | Yu-Chung Lin |
| collection | DOAJ |
| description | Red, green, and blue light In<sub>x</sub>Ga<sub>1−x</sub>N multiple quantum wells have been grown on GaN/γ-LiAlO<sub>2</sub> microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for In<sub>x</sub>Ga<sub>1-x</sub>N multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (In<sub>x</sub>Ga<sub>1-x</sub>N) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful In<sub>x</sub>Ga<sub>1-x</sub>N-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications. |
| first_indexed | 2024-03-11T01:33:35Z |
| format | Article |
| id | doaj.art-be6cb9ba09b2408092edfacd4be47057 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T01:33:35Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-be6cb9ba09b2408092edfacd4be470572023-11-18T17:11:23ZengMDPI AGNanomaterials2079-49912023-06-011313192210.3390/nano13131922Optimization of Ternary In<sub>x</sub>Ga<sub>1-x</sub>N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDsYu-Chung Lin0Ikai Lo1Cheng-Da Tsai2Ying-Chieh Wang3Hui-Chun Huang4Chu-An Li5Mitch M. C. Chou6Ting-Chang Chang7Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, TaiwanDepartment of Physics, National Sun Yat-sen University, Kaohsiung 80424, TaiwanDepartment of Physics, National Sun Yat-sen University, Kaohsiung 80424, TaiwanCenter for Nanoscience and Nanotechnology, National Sun Yat-sen University, Kaohsiung 80424, TaiwanDepartment of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 80424, TaiwanDepartment of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 80424, TaiwanDepartment of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung 80424, TaiwanDepartment of Physics, National Sun Yat-sen University, Kaohsiung 80424, TaiwanRed, green, and blue light In<sub>x</sub>Ga<sub>1−x</sub>N multiple quantum wells have been grown on GaN/γ-LiAlO<sub>2</sub> microdisk substrates by plasma-assisted molecular beam epitaxy. We established a mechanism to optimize the self-assembly growth with ball-stick model for In<sub>x</sub>Ga<sub>1-x</sub>N multiple quantum well microdisks by bottom-up nanotechnology. We showed that three different red, green, and blue lighting micro-LEDs can be made of one single material (In<sub>x</sub>Ga<sub>1-x</sub>N) solely by tuning the indium content. We also demonstrated that one can fabricate a beautiful In<sub>x</sub>Ga<sub>1-x</sub>N-QW microdisk by choosing an appropriate buffer layer for optoelectronic applications.https://www.mdpi.com/2079-4991/13/13/1922full-color GaN micro-LEDsIn<sub>x</sub>Ga<sub>1-x</sub>N-based quantum wells (QW)plasma-assisted molecular beam epitaxy (PAMBE) |
| spellingShingle | Yu-Chung Lin Ikai Lo Cheng-Da Tsai Ying-Chieh Wang Hui-Chun Huang Chu-An Li Mitch M. C. Chou Ting-Chang Chang Optimization of Ternary In<sub>x</sub>Ga<sub>1-x</sub>N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs Nanomaterials full-color GaN micro-LEDs In<sub>x</sub>Ga<sub>1-x</sub>N-based quantum wells (QW) plasma-assisted molecular beam epitaxy (PAMBE) |
| title | Optimization of Ternary In<sub>x</sub>Ga<sub>1-x</sub>N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs |
| title_full | Optimization of Ternary In<sub>x</sub>Ga<sub>1-x</sub>N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs |
| title_fullStr | Optimization of Ternary In<sub>x</sub>Ga<sub>1-x</sub>N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs |
| title_full_unstemmed | Optimization of Ternary In<sub>x</sub>Ga<sub>1-x</sub>N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs |
| title_short | Optimization of Ternary In<sub>x</sub>Ga<sub>1-x</sub>N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs |
| title_sort | optimization of ternary in sub x sub ga sub 1 x sub n quantum wells on gan microdisks for full color gan micro leds |
| topic | full-color GaN micro-LEDs In<sub>x</sub>Ga<sub>1-x</sub>N-based quantum wells (QW) plasma-assisted molecular beam epitaxy (PAMBE) |
| url | https://www.mdpi.com/2079-4991/13/13/1922 |
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