Numerical simulation of the current-voltage characteristics of the inhomogeneous Schottky diodes
In this paper we offer methods for estimation parameters of diodes of the Schottky by comparing outcomes of calculations and experiment. Definite some parameters of contact area: allocation of a active impurity in this area, to define more precisely a potential barrier in the area, to study tunnel...
Main Authors: | Albertas Pincevičius, Rimantas-Jonas Rakauskas |
---|---|
Format: | Article |
Language: | English |
Published: |
Vilnius University Press
2002-12-01
|
Series: | Lietuvos Matematikos Rinkinys |
Online Access: | https://www.zurnalai.vu.lt/LMR/article/view/32922 |
Similar Items
-
The numerical simulation of military skills
by: Albertas Pincevičius, et al.
Published: (2002-12-01) -
The numerical models of the estimation of the electrooptical parameters of GaAs
by: Albertas Pincevičius, et al.
Published: (2002-12-01) -
Computer algebra and applications
by: Aleksas Domarkas, et al.
Published: (2002-12-01) -
Simulation of forward current-voltage characteristics for Schottky diodes with MOS trenches
by: J. A. Solovjov
Published: (2021-10-01) -
The mathematical modeling of counter-attack
by: Albertas Pincevičius, et al.
Published: (2001-12-01)