Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes
The performance of colloidal quantum dot light-emitting diodes (QD-LEDs) have been rapidly improved since metal oxide semiconductors were adopted for an electron transport layer (ETL). Among metal oxide semiconductors, zinc oxide (ZnO) has been the most generally employed for the ETL because of its...
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MDPI AG
2020-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/10/4/726 |
| _version_ | 1797570918722043904 |
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| author | Myeongjin Park Jeongkyun Roh Jaehoon Lim Hyunkoo Lee Donggu Lee |
| author_facet | Myeongjin Park Jeongkyun Roh Jaehoon Lim Hyunkoo Lee Donggu Lee |
| author_sort | Myeongjin Park |
| collection | DOAJ |
| description | The performance of colloidal quantum dot light-emitting diodes (QD-LEDs) have been rapidly improved since metal oxide semiconductors were adopted for an electron transport layer (ETL). Among metal oxide semiconductors, zinc oxide (ZnO) has been the most generally employed for the ETL because of its excellent electron transport and injection properties. However, the ZnO ETL often yields charge imbalance in QD-LEDs, which results in undesirable device performance. Here, to address this issue, we introduce double metal oxide ETLs comprising ZnO and tin dioxide (SnO<sub>2</sub>) bilayer stacks. The employment of SnO<sub>2</sub> for the second ETL significantly improves charge balance in the QD-LEDs by preventing spontaneous electron injection from the ZnO ETL and, as a result, we demonstrate 1.6 times higher luminescence efficiency in the QD-LEDs. This result suggests that the proposed double metal oxide ETLs can be a versatile platform for QD-based optoelectronic devices. |
| first_indexed | 2024-03-10T20:32:16Z |
| format | Article |
| id | doaj.art-beba015d105e434495f2e461baf58dee |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T20:32:16Z |
| publishDate | 2020-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-beba015d105e434495f2e461baf58dee2023-11-19T21:20:26ZengMDPI AGNanomaterials2079-49912020-04-0110472610.3390/nano10040726Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting DiodesMyeongjin Park0Jeongkyun Roh1Jaehoon Lim2Hyunkoo Lee3Donggu Lee4Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul 08826, KoreaDepartment of Electrical Engineering, Pusan National University, Busan 46241, KoreaDepartment of Energy Science, Center for Artificial Atoms, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 16419, KoreaDepartment of Electronics Engineering, Sookmyung Women’s University, Seoul 04310, KoreaRealistic Media Research Center, Innovative Technology Research Division, Gumi Electronics & Information Technology Research Institute (GERI), Gumi, Gyeonsangbuk-do 39253, KoreaThe performance of colloidal quantum dot light-emitting diodes (QD-LEDs) have been rapidly improved since metal oxide semiconductors were adopted for an electron transport layer (ETL). Among metal oxide semiconductors, zinc oxide (ZnO) has been the most generally employed for the ETL because of its excellent electron transport and injection properties. However, the ZnO ETL often yields charge imbalance in QD-LEDs, which results in undesirable device performance. Here, to address this issue, we introduce double metal oxide ETLs comprising ZnO and tin dioxide (SnO<sub>2</sub>) bilayer stacks. The employment of SnO<sub>2</sub> for the second ETL significantly improves charge balance in the QD-LEDs by preventing spontaneous electron injection from the ZnO ETL and, as a result, we demonstrate 1.6 times higher luminescence efficiency in the QD-LEDs. This result suggests that the proposed double metal oxide ETLs can be a versatile platform for QD-based optoelectronic devices.https://www.mdpi.com/2079-4991/10/4/726quantum dot (QD)light emitting diode (LED)metal oxidedouble electron transport layer (ETL)SnO<sub>2</sub> nanoparticles |
| spellingShingle | Myeongjin Park Jeongkyun Roh Jaehoon Lim Hyunkoo Lee Donggu Lee Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes Nanomaterials quantum dot (QD) light emitting diode (LED) metal oxide double electron transport layer (ETL) SnO<sub>2</sub> nanoparticles |
| title | Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes |
| title_full | Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes |
| title_fullStr | Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes |
| title_full_unstemmed | Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes |
| title_short | Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes |
| title_sort | double metal oxide electron transport layers for colloidal quantum dot light emitting diodes |
| topic | quantum dot (QD) light emitting diode (LED) metal oxide double electron transport layer (ETL) SnO<sub>2</sub> nanoparticles |
| url | https://www.mdpi.com/2079-4991/10/4/726 |
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