Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology
The design of a wide-band voltage-controlled oscillator (VCO) modified as a VCO with programmable tail currents is introduced herein. The VCO is implemented by using CMOS current-mode logic stages, which are based on differential pairs that are connected in a ring topology. SPICE simulation results...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-10-01
|
Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/8/10/1156 |
_version_ | 1798006831820308480 |
---|---|
author | Esteban Tlelo-Cuautle Perla Rubi Castañeda-Aviña Rodolfo Trejo-Guerra Victor Hugo Carbajal-Gómez |
author_facet | Esteban Tlelo-Cuautle Perla Rubi Castañeda-Aviña Rodolfo Trejo-Guerra Victor Hugo Carbajal-Gómez |
author_sort | Esteban Tlelo-Cuautle |
collection | DOAJ |
description | The design of a wide-band voltage-controlled oscillator (VCO) modified as a VCO with programmable tail currents is introduced herein. The VCO is implemented by using CMOS current-mode logic stages, which are based on differential pairs that are connected in a ring topology. SPICE simulation results show that the VCO operates within the frequency ranges of 2.65−5.65 GHz, and when it is modified, the VCO with programmable tail currents operates between 1.38 GHz and 4.72 GHz. The design of the CMOS differential stage is detailed along with the symbolic approximation of its dominant pole, which is varied to increase the frequency response in order to achieve a higher oscillation frequency when implementing the ring oscillator structure. The layout of the VCO is described and pre- and post-layout simulations are provided, which are in good agreement using CMOS technology of 180 nm. Finally, process, voltage and temperature variations are performed to guarantee robustness of the designed CMOS ring oscillator. |
first_indexed | 2024-04-11T13:01:59Z |
format | Article |
id | doaj.art-bed853da03144f4cba6ef2275360b029 |
institution | Directory Open Access Journal |
issn | 2079-9292 |
language | English |
last_indexed | 2024-04-11T13:01:59Z |
publishDate | 2019-10-01 |
publisher | MDPI AG |
record_format | Article |
series | Electronics |
spelling | doaj.art-bed853da03144f4cba6ef2275360b0292022-12-22T04:22:55ZengMDPI AGElectronics2079-92922019-10-01810115610.3390/electronics8101156electronics8101156Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS TechnologyEsteban Tlelo-Cuautle0Perla Rubi Castañeda-Aviña1Rodolfo Trejo-Guerra2Victor Hugo Carbajal-Gómez3Department of Electronics, INAOE, Puebla 72840, MexicoDepartment of Electronics, INAOE, Puebla 72840, MexicoSEMTECH, Aguascalientes 20115, MexicoFaculty of Electronics, Benemérita Universidad Autónoma de Puebla, Puebla 72570, MexicoThe design of a wide-band voltage-controlled oscillator (VCO) modified as a VCO with programmable tail currents is introduced herein. The VCO is implemented by using CMOS current-mode logic stages, which are based on differential pairs that are connected in a ring topology. SPICE simulation results show that the VCO operates within the frequency ranges of 2.65−5.65 GHz, and when it is modified, the VCO with programmable tail currents operates between 1.38 GHz and 4.72 GHz. The design of the CMOS differential stage is detailed along with the symbolic approximation of its dominant pole, which is varied to increase the frequency response in order to achieve a higher oscillation frequency when implementing the ring oscillator structure. The layout of the VCO is described and pre- and post-layout simulations are provided, which are in good agreement using CMOS technology of 180 nm. Finally, process, voltage and temperature variations are performed to guarantee robustness of the designed CMOS ring oscillator.https://www.mdpi.com/2079-9292/8/10/1156vcocurrent-mode logicmosfetpvt variationslayout |
spellingShingle | Esteban Tlelo-Cuautle Perla Rubi Castañeda-Aviña Rodolfo Trejo-Guerra Victor Hugo Carbajal-Gómez Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology Electronics vco current-mode logic mosfet pvt variations layout |
title | Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology |
title_full | Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology |
title_fullStr | Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology |
title_full_unstemmed | Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology |
title_short | Design of a Wide-Band Voltage-Controlled Ring Oscillator Implemented in 180 nm CMOS Technology |
title_sort | design of a wide band voltage controlled ring oscillator implemented in 180 nm cmos technology |
topic | vco current-mode logic mosfet pvt variations layout |
url | https://www.mdpi.com/2079-9292/8/10/1156 |
work_keys_str_mv | AT estebantlelocuautle designofawidebandvoltagecontrolledringoscillatorimplementedin180nmcmostechnology AT perlarubicastanedaavina designofawidebandvoltagecontrolledringoscillatorimplementedin180nmcmostechnology AT rodolfotrejoguerra designofawidebandvoltagecontrolledringoscillatorimplementedin180nmcmostechnology AT victorhugocarbajalgomez designofawidebandvoltagecontrolledringoscillatorimplementedin180nmcmostechnology |