Comprehensive Study and Design of Graphene Transistor
Graphene, renowned for its exceptional electrical, optical, and mechanical properties, takes center stage in the realm of next-generation electronics. In this paper, we provide a thorough investigation into the comprehensive fabrication process of graphene field-effect transistors. Recognizing the p...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-03-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/15/3/406 |
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| author | Qian Cai Jiachi Ye Belal Jahannia Hao Wang Chandraman Patil Rasul Al Foysal Redoy Abdulrahman Sidam Sinan Sameer Sultan Aljohani Muhammed Umer Aseel Alsulami Essa Shibli Bassim Arkook Yas Al-Hadeethi Hamed Dalir Elham Heidari |
| author_facet | Qian Cai Jiachi Ye Belal Jahannia Hao Wang Chandraman Patil Rasul Al Foysal Redoy Abdulrahman Sidam Sinan Sameer Sultan Aljohani Muhammed Umer Aseel Alsulami Essa Shibli Bassim Arkook Yas Al-Hadeethi Hamed Dalir Elham Heidari |
| author_sort | Qian Cai |
| collection | DOAJ |
| description | Graphene, renowned for its exceptional electrical, optical, and mechanical properties, takes center stage in the realm of next-generation electronics. In this paper, we provide a thorough investigation into the comprehensive fabrication process of graphene field-effect transistors. Recognizing the pivotal role graphene quality plays in determining device performance, we explore many techniques and metrological methods to assess and ensure the superior quality of graphene layers. In addition, we delve into the intricate nuances of doping graphene and examine its effects on electronic properties. We uncover the transformative impact these dopants have on the charge carrier concentration, bandgap, and overall device performance. By amalgamating these critical facets of graphene field-effect transistors fabrication and analysis, this study offers a holistic understanding for researchers and engineers aiming to optimize the performance of graphene-based electronic devices. |
| first_indexed | 2024-04-24T18:00:48Z |
| format | Article |
| id | doaj.art-bf260a82c25b4dcab1fab76188fc30b9 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-04-24T18:00:48Z |
| publishDate | 2024-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-bf260a82c25b4dcab1fab76188fc30b92024-03-27T13:55:20ZengMDPI AGMicromachines2072-666X2024-03-0115340610.3390/mi15030406Comprehensive Study and Design of Graphene TransistorQian Cai0Jiachi Ye1Belal Jahannia2Hao Wang3Chandraman Patil4Rasul Al Foysal Redoy5Abdulrahman Sidam6Sinan Sameer7Sultan Aljohani8Muhammed Umer9Aseel Alsulami10Essa Shibli11Bassim Arkook12Yas Al-Hadeethi13Hamed Dalir14Elham Heidari15Department of Electrical and Computer Engineering, Malachowsky Hall, University of Florida, Gainesville, FL 32611, USADepartment of Electrical and Computer Engineering, Malachowsky Hall, University of Florida, Gainesville, FL 32611, USADepartment of Electrical and Computer Engineering, Malachowsky Hall, University of Florida, Gainesville, FL 32611, USADepartment of Electrical and Computer Engineering, Malachowsky Hall, University of Florida, Gainesville, FL 32611, USADepartment of Electrical and Computer Engineering, Malachowsky Hall, University of Florida, Gainesville, FL 32611, USADepartment of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi ArabiaDepartment of Electrical and Computer Engineering, Malachowsky Hall, University of Florida, Gainesville, FL 32611, USADepartment of Electrical and Computer Engineering, Malachowsky Hall, University of Florida, Gainesville, FL 32611, USAGraphene, renowned for its exceptional electrical, optical, and mechanical properties, takes center stage in the realm of next-generation electronics. In this paper, we provide a thorough investigation into the comprehensive fabrication process of graphene field-effect transistors. Recognizing the pivotal role graphene quality plays in determining device performance, we explore many techniques and metrological methods to assess and ensure the superior quality of graphene layers. In addition, we delve into the intricate nuances of doping graphene and examine its effects on electronic properties. We uncover the transformative impact these dopants have on the charge carrier concentration, bandgap, and overall device performance. By amalgamating these critical facets of graphene field-effect transistors fabrication and analysis, this study offers a holistic understanding for researchers and engineers aiming to optimize the performance of graphene-based electronic devices.https://www.mdpi.com/2072-666X/15/3/406graphenefield effect transistor2D materialchemical vapor deposition |
| spellingShingle | Qian Cai Jiachi Ye Belal Jahannia Hao Wang Chandraman Patil Rasul Al Foysal Redoy Abdulrahman Sidam Sinan Sameer Sultan Aljohani Muhammed Umer Aseel Alsulami Essa Shibli Bassim Arkook Yas Al-Hadeethi Hamed Dalir Elham Heidari Comprehensive Study and Design of Graphene Transistor Micromachines graphene field effect transistor 2D material chemical vapor deposition |
| title | Comprehensive Study and Design of Graphene Transistor |
| title_full | Comprehensive Study and Design of Graphene Transistor |
| title_fullStr | Comprehensive Study and Design of Graphene Transistor |
| title_full_unstemmed | Comprehensive Study and Design of Graphene Transistor |
| title_short | Comprehensive Study and Design of Graphene Transistor |
| title_sort | comprehensive study and design of graphene transistor |
| topic | graphene field effect transistor 2D material chemical vapor deposition |
| url | https://www.mdpi.com/2072-666X/15/3/406 |
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