Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization
Suppression pre-breakdown in planar separated absorption, grading, charge and multiplication (SAGCM) avalanche photodiodes (APDs) with the help of Floating Guard Ring (FGR) is still a research hotspot. In this paper, a lattice-matched InP/InGaAs-based SAGCM structure is grown by Metal-Org...
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IEEE
2022-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/9720190/ |
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| author | Junyang Zhang Xuanzhang Li Chunhua Du Yang Jiang Ziguang Ma Hong Chen Haiqiang Jia Wenxin Wang Zhen Deng |
| author_facet | Junyang Zhang Xuanzhang Li Chunhua Du Yang Jiang Ziguang Ma Hong Chen Haiqiang Jia Wenxin Wang Zhen Deng |
| author_sort | Junyang Zhang |
| collection | DOAJ |
| description | Suppression pre-breakdown in planar separated absorption, grading, charge and multiplication (SAGCM) avalanche photodiodes (APDs) with the help of Floating Guard Ring (FGR) is still a research hotspot. In this paper, a lattice-matched InP/InGaAs-based SAGCM structure is grown by Metal-Organic Chemical Vapor Deposition and thus the planar 50 μm photosensitive area APDs with different FGR structures are fabricated using zinc diffusion process. The effects of the different lengths of FGR (4 μm, 8 μm, 12 μm, 16 μm), and the different distances between FGR and the Zn diffused p+ region (4 μm, 6 μm, 8 μm, 10 μm) on the optoelectrical characteristics are deeply studied. The results from optical microscope, scanning electron microscope and current-voltage curves reveal that there is an optimal length and distance for the punch-through and breakdown voltage. Furthermore, the nA-level dark current, gain (<italic>M</italic>) of up to 10 at breakdown voltage, responsibility as high as 9.01 A/W at <italic>M</italic> = 10 and quantum efficiency equaling to 72% are also tested and calculated, proving the good performance of our devices. The optimized FGR parameters and related structure are expected to be helpful for obtaining high-performance, small-size InP/InGaAs-based APDs. |
| first_indexed | 2024-04-09T14:28:36Z |
| format | Article |
| id | doaj.art-bf2b35de2f714c01991c2fae71c0730e |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-04-09T14:28:36Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
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| series | IEEE Photonics Journal |
| spelling | doaj.art-bf2b35de2f714c01991c2fae71c0730e2023-05-03T23:00:04ZengIEEEIEEE Photonics Journal1943-06552022-01-011421610.1109/JPHOT.2022.31536499720190Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its OptimizationJunyang Zhang0Xuanzhang Li1Chunhua Du2Yang Jiang3Ziguang Ma4Hong Chen5Haiqiang Jia6Wenxin Wang7Zhen Deng8https://orcid.org/0000-0002-8591-173XKey Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaKey Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, ChinaSuppression pre-breakdown in planar separated absorption, grading, charge and multiplication (SAGCM) avalanche photodiodes (APDs) with the help of Floating Guard Ring (FGR) is still a research hotspot. In this paper, a lattice-matched InP/InGaAs-based SAGCM structure is grown by Metal-Organic Chemical Vapor Deposition and thus the planar 50 μm photosensitive area APDs with different FGR structures are fabricated using zinc diffusion process. The effects of the different lengths of FGR (4 μm, 8 μm, 12 μm, 16 μm), and the different distances between FGR and the Zn diffused p+ region (4 μm, 6 μm, 8 μm, 10 μm) on the optoelectrical characteristics are deeply studied. The results from optical microscope, scanning electron microscope and current-voltage curves reveal that there is an optimal length and distance for the punch-through and breakdown voltage. Furthermore, the nA-level dark current, gain (<italic>M</italic>) of up to 10 at breakdown voltage, responsibility as high as 9.01 A/W at <italic>M</italic> = 10 and quantum efficiency equaling to 72% are also tested and calculated, proving the good performance of our devices. The optimized FGR parameters and related structure are expected to be helpful for obtaining high-performance, small-size InP/InGaAs-based APDs.https://ieeexplore.ieee.org/document/9720190/Planar InP/InGaAs-based SAGCM APDsFGRpunch-throughbreakdown |
| spellingShingle | Junyang Zhang Xuanzhang Li Chunhua Du Yang Jiang Ziguang Ma Hong Chen Haiqiang Jia Wenxin Wang Zhen Deng Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization IEEE Photonics Journal Planar InP/InGaAs-based SAGCM APDs FGR punch-through breakdown |
| title | Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization |
| title_full | Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization |
| title_fullStr | Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization |
| title_full_unstemmed | Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization |
| title_short | Experimental Demonstration of the Impact of the Parameters of Floating Guard Ring on Planar InP/InGaAs-Based Avalanche Photodiodes’ Performance and Its Optimization |
| title_sort | experimental demonstration of the impact of the parameters of floating guard ring on planar inp x002f ingaas based avalanche photodiodes x2019 performance and its optimization |
| topic | Planar InP/InGaAs-based SAGCM APDs FGR punch-through breakdown |
| url | https://ieeexplore.ieee.org/document/9720190/ |
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