CMOS Vector Modulator-Based Phase Shifter for Millimeter-Wave Transmitter
A D-band phase shifter for CMOS transmitters in a millimeter-wave imaging system is proposed based on vector modulator configuration. Depending on the phase control biasing, the output impedance variation of phase shifters at the millimeter-wave transmitter can interfere with optimizing the operatio...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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The Korean Institute of Electromagnetic Engineering and Science
2025-01-01
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| Series: | Journal of Electromagnetic Engineering and Science |
| Subjects: | |
| Online Access: | https://www.jees.kr/upload/pdf/jees-2025-1-r-275.pdf |
| _version_ | 1826801999329361920 |
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| author | Ju-Hyeon Park Ui-Gyu Choi Hyunwon Moon Jong-Ryul Yang |
| author_facet | Ju-Hyeon Park Ui-Gyu Choi Hyunwon Moon Jong-Ryul Yang |
| author_sort | Ju-Hyeon Park |
| collection | DOAJ |
| description | A D-band phase shifter for CMOS transmitters in a millimeter-wave imaging system is proposed based on vector modulator configuration. Depending on the phase control biasing, the output impedance variation of phase shifters at the millimeter-wave transmitter can interfere with optimizing the operation of power amplifiers with a fixed input impedance. The proposed phase shifter incorporates an output-matching circuit with transformers to minimize output impedance variations. Differential I and Q channels are coupled in each transformer and combined at the power combiner. This configuration can minimize the impedance variation at the output port and increase the saturated output power of the proposed phase shifter. The proposed phase shifter, implemented on 0.184 mm2 using a 65-nm CMOS process, exhibits a maximum gain of −11 dB, a phase shift of over 180°, and an input-referred P1dB of 7 dBm in the frequency bandwidth of 115–135 GHz. The total current consumption is a maximum of 36 mA at a supply voltage of 1.2 V. |
| first_indexed | 2025-03-17T01:15:47Z |
| format | Article |
| id | doaj.art-bf3db03b839540a791d972c7505ba7fa |
| institution | Directory Open Access Journal |
| issn | 2671-7255 2671-7263 |
| language | English |
| last_indexed | 2025-03-17T01:15:47Z |
| publishDate | 2025-01-01 |
| publisher | The Korean Institute of Electromagnetic Engineering and Science |
| record_format | Article |
| series | Journal of Electromagnetic Engineering and Science |
| spelling | doaj.art-bf3db03b839540a791d972c7505ba7fa2025-02-18T07:14:56ZengThe Korean Institute of Electromagnetic Engineering and ScienceJournal of Electromagnetic Engineering and Science2671-72552671-72632025-01-01251253110.26866/jees.2025.1.r.2753720CMOS Vector Modulator-Based Phase Shifter for Millimeter-Wave TransmitterJu-Hyeon Park0Ui-Gyu Choi1Hyunwon Moon2Jong-Ryul Yang3 Department of Electrical and Electronics Engineering, Konkuk University, Seoul, Korea Department of Electrical and Electronics Engineering, Konkuk University, Seoul, Korea Department of Electronic Engineering, Daegu University, Gyeongsan, Korea Department of Electrical and Electronics Engineering, Konkuk University, Seoul, KoreaA D-band phase shifter for CMOS transmitters in a millimeter-wave imaging system is proposed based on vector modulator configuration. Depending on the phase control biasing, the output impedance variation of phase shifters at the millimeter-wave transmitter can interfere with optimizing the operation of power amplifiers with a fixed input impedance. The proposed phase shifter incorporates an output-matching circuit with transformers to minimize output impedance variations. Differential I and Q channels are coupled in each transformer and combined at the power combiner. This configuration can minimize the impedance variation at the output port and increase the saturated output power of the proposed phase shifter. The proposed phase shifter, implemented on 0.184 mm2 using a 65-nm CMOS process, exhibits a maximum gain of −11 dB, a phase shift of over 180°, and an input-referred P1dB of 7 dBm in the frequency bandwidth of 115–135 GHz. The total current consumption is a maximum of 36 mA at a supply voltage of 1.2 V.https://www.jees.kr/upload/pdf/jees-2025-1-r-275.pdfcmosmillimeter-waveoutput impedance variationphase shiftervector modulator |
| spellingShingle | Ju-Hyeon Park Ui-Gyu Choi Hyunwon Moon Jong-Ryul Yang CMOS Vector Modulator-Based Phase Shifter for Millimeter-Wave Transmitter Journal of Electromagnetic Engineering and Science cmos millimeter-wave output impedance variation phase shifter vector modulator |
| title | CMOS Vector Modulator-Based Phase Shifter for Millimeter-Wave Transmitter |
| title_full | CMOS Vector Modulator-Based Phase Shifter for Millimeter-Wave Transmitter |
| title_fullStr | CMOS Vector Modulator-Based Phase Shifter for Millimeter-Wave Transmitter |
| title_full_unstemmed | CMOS Vector Modulator-Based Phase Shifter for Millimeter-Wave Transmitter |
| title_short | CMOS Vector Modulator-Based Phase Shifter for Millimeter-Wave Transmitter |
| title_sort | cmos vector modulator based phase shifter for millimeter wave transmitter |
| topic | cmos millimeter-wave output impedance variation phase shifter vector modulator |
| url | https://www.jees.kr/upload/pdf/jees-2025-1-r-275.pdf |
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