Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection

The response property and stability of diamond Schottky barrier photodiodes (SBPDs) were investigated for the monitor applications of deep ultraviolet (DUV) light and high-energy radiation particles. The SBPDs were fabricated on the unintentionally doped insulating diamond epilayer grown on a heavil...

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Main Authors: Masataka Imura, Manabu Togawa, Masaya Miyahara, Hironori Okumura, Jiro Nishinaga, Meiyong Liao, Yasuo Koide
Format: Article
Language:English
Published: Taylor & Francis Group 2022-12-01
Series:Functional Diamond
Subjects:
Online Access:http://dx.doi.org/10.1080/26941112.2022.2150526
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author Masataka Imura
Manabu Togawa
Masaya Miyahara
Hironori Okumura
Jiro Nishinaga
Meiyong Liao
Yasuo Koide
author_facet Masataka Imura
Manabu Togawa
Masaya Miyahara
Hironori Okumura
Jiro Nishinaga
Meiyong Liao
Yasuo Koide
author_sort Masataka Imura
collection DOAJ
description The response property and stability of diamond Schottky barrier photodiodes (SBPDs) were investigated for the monitor applications of deep ultraviolet (DUV) light and high-energy radiation particles. The SBPDs were fabricated on the unintentionally doped insulating diamond epilayer grown on a heavily boron-doped p+-diamond (100) conductive substrate by microwave plasma chemical vapor deposition. The vertical-type SBPDs were constructed of semitransparent tungsten carbide (WC) Schottky contact on the top of the device and a WC/titanium ohmic contact on the bottom. The SBPDs were operated to detect the DUV light and protons in zero-bias photovoltaic mode. The spectral response of the SBPDs showed that the peak wavelength was at 182 nm with a sensitivity of 46 ± 1 mA/W. The response speed was shorter than 1 sec, with a negligible charge-up effect and persistent photoconductivity. The SBPDs showed a stable response upon the irradiation by 172-nm xenon excimer lamp with 70 mW/cm2 for 200 hrs and 70 MeV protons for the dose of 10 MGy, corresponding to a non-ionizing energy loss of 1.4 × 1016 MeV neq/cm2.
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spelling doaj.art-bf79685c0c594ed0b5eae722d65530ce2023-10-12T13:43:53ZengTaylor & Francis GroupFunctional Diamond2694-11202022-12-012116717410.1080/26941112.2022.21505262150526Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detectionMasataka Imura0Manabu Togawa1Masaya Miyahara2Hironori Okumura3Jiro Nishinaga4Meiyong Liao5Yasuo Koide6Research Center for Functional Materials, National Institute for Materials Science (NIMS)Institute of Particle and Nuclear Studies, and International Center for Quantum-field Measurement Systems for Studies of the Universe and Particles (QUP, WPI), High Energy Accelerator Research Organization (KEK)Institute of Particle and Nuclear Studies, and International Center for Quantum-field Measurement Systems for Studies of the Universe and Particles (QUP, WPI), High Energy Accelerator Research Organization (KEK)Faculty of Pure and Applied Sciences, University of TsukubaResearch Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST)Research Center for Functional Materials, National Institute for Materials Science (NIMS)Research Center for Functional Materials, National Institute for Materials Science (NIMS)The response property and stability of diamond Schottky barrier photodiodes (SBPDs) were investigated for the monitor applications of deep ultraviolet (DUV) light and high-energy radiation particles. The SBPDs were fabricated on the unintentionally doped insulating diamond epilayer grown on a heavily boron-doped p+-diamond (100) conductive substrate by microwave plasma chemical vapor deposition. The vertical-type SBPDs were constructed of semitransparent tungsten carbide (WC) Schottky contact on the top of the device and a WC/titanium ohmic contact on the bottom. The SBPDs were operated to detect the DUV light and protons in zero-bias photovoltaic mode. The spectral response of the SBPDs showed that the peak wavelength was at 182 nm with a sensitivity of 46 ± 1 mA/W. The response speed was shorter than 1 sec, with a negligible charge-up effect and persistent photoconductivity. The SBPDs showed a stable response upon the irradiation by 172-nm xenon excimer lamp with 70 mW/cm2 for 200 hrs and 70 MeV protons for the dose of 10 MGy, corresponding to a non-ionizing energy loss of 1.4 × 1016 MeV neq/cm2.http://dx.doi.org/10.1080/26941112.2022.2150526diamondschottky barrier photodiodedeep-ultraviolet lightdetector for xenon excimer lampdetector for protons
spellingShingle Masataka Imura
Manabu Togawa
Masaya Miyahara
Hironori Okumura
Jiro Nishinaga
Meiyong Liao
Yasuo Koide
Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection
Functional Diamond
diamond
schottky barrier photodiode
deep-ultraviolet light
detector for xenon excimer lamp
detector for protons
title Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection
title_full Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection
title_fullStr Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection
title_full_unstemmed Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection
title_short Highly tolerant diamond Schottky barrier photodiodes for deep-ultraviolet xenon excimer lamp and protons detection
title_sort highly tolerant diamond schottky barrier photodiodes for deep ultraviolet xenon excimer lamp and protons detection
topic diamond
schottky barrier photodiode
deep-ultraviolet light
detector for xenon excimer lamp
detector for protons
url http://dx.doi.org/10.1080/26941112.2022.2150526
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