Electronic global-shutter one-thin-film-transistor active pixel sensor array with a pixel pitch of 50 μm and photoconductive gain greater than 100 for large-area dynamic imaging
In large-area dynamic imaging, an active pixel sensor (APS) is proposed. However, there is a trade-off between signal-to-noise ratio (SNR) and spatial resolution. To resolve this, a 256 × 256 active pixel image sensor array based on a 3-D dual-gate photosensitive thin-film transistor (TFT) is presen...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Frontiers Media S.A.
2022-09-01
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| Series: | Frontiers in Physics |
| Subjects: | |
| Online Access: | https://www.frontiersin.org/articles/10.3389/fphy.2022.1000909/full |
| Summary: | In large-area dynamic imaging, an active pixel sensor (APS) is proposed. However, there is a trade-off between signal-to-noise ratio (SNR) and spatial resolution. To resolve this, a 256 × 256 active pixel image sensor array based on a 3-D dual-gate photosensitive thin-film transistor (TFT) is presented in this work, with a pixel pitch of 50 μm, pixel fill factor of 63%, photoconductive gain of 102–104 and spatial resolution of 505 ppi. An electronic global shutter is enabled by dual-gate biasing without additional a shutter TFT. Such an array is capable of dynamic imaging at a frame rate of 34 Hz. |
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| ISSN: | 2296-424X |