High Performance p-i-n Photodetectors on Ge-on-Insulator Platform
In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrat...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-04-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/5/1125 |
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| author | Xuewei Zhao Guilei Wang Hongxiao Lin Yong Du Xue Luo Zhenzhen Kong Jiale Su Junjie Li Wenjuan Xiong Yuanhao Miao Haiou Li Guoping Guo Henry H. Radamson |
| author_facet | Xuewei Zhao Guilei Wang Hongxiao Lin Yong Du Xue Luo Zhenzhen Kong Jiale Su Junjie Li Wenjuan Xiong Yuanhao Miao Haiou Li Guoping Guo Henry H. Radamson |
| author_sort | Xuewei Zhao |
| collection | DOAJ |
| description | In this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrates. This improvement in dark current is due to the careful removal of the defected Ge layer, which is formed with the initial growth of Ge on Si. The bulk leakage current density and surface leakage density of the GOI detector at −1 V are as low as 1.79 mA/cm<sup>2</sup> and 0.34 μA/cm, respectively. GOI photodetectors with responsivity of 0.5 and 0.9 A/W at 1550 and 1310 nm wavelength are demonstrated. The optical performance of the GOI photodetector could be remarkably improved by integrating a tetraethylorthosilicate (TEOS) layer on the oxide side due to the better optical confinement and resonant cavity effect. These PDs with high performances and full compatibility with Si CMOS processes are attractive for applications in both telecommunications and monolithic optoelectronics integration on the same chip. |
| first_indexed | 2024-03-10T11:56:19Z |
| format | Article |
| id | doaj.art-bfd8626b67e044cb93359140d723a737 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T11:56:19Z |
| publishDate | 2021-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-bfd8626b67e044cb93359140d723a7372023-11-21T17:17:42ZengMDPI AGNanomaterials2079-49912021-04-01115112510.3390/nano11051125High Performance p-i-n Photodetectors on Ge-on-Insulator PlatformXuewei Zhao0Guilei Wang1Hongxiao Lin2Yong Du3Xue Luo4Zhenzhen Kong5Jiale Su6Junjie Li7Wenjuan Xiong8Yuanhao Miao9Haiou Li10Guoping Guo11Henry H. Radamson12CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaResearch and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, ChinaCAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, ChinaKey Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaIn this article, we demonstrated novel methods to improve the performance of p-i-n photodetectors (PDs) on a germanium-on-insulator (GOI). For GOI photodetectors with a mesa diameter of 10 μm, the dark current at −1 V is 2.5 nA, which is 2.6-fold lower than that of the Ge PD processed on Si substrates. This improvement in dark current is due to the careful removal of the defected Ge layer, which is formed with the initial growth of Ge on Si. The bulk leakage current density and surface leakage density of the GOI detector at −1 V are as low as 1.79 mA/cm<sup>2</sup> and 0.34 μA/cm, respectively. GOI photodetectors with responsivity of 0.5 and 0.9 A/W at 1550 and 1310 nm wavelength are demonstrated. The optical performance of the GOI photodetector could be remarkably improved by integrating a tetraethylorthosilicate (TEOS) layer on the oxide side due to the better optical confinement and resonant cavity effect. These PDs with high performances and full compatibility with Si CMOS processes are attractive for applications in both telecommunications and monolithic optoelectronics integration on the same chip.https://www.mdpi.com/2079-4991/11/5/1125GOIphotodetectorsdark currentresponsivity |
| spellingShingle | Xuewei Zhao Guilei Wang Hongxiao Lin Yong Du Xue Luo Zhenzhen Kong Jiale Su Junjie Li Wenjuan Xiong Yuanhao Miao Haiou Li Guoping Guo Henry H. Radamson High Performance p-i-n Photodetectors on Ge-on-Insulator Platform Nanomaterials GOI photodetectors dark current responsivity |
| title | High Performance p-i-n Photodetectors on Ge-on-Insulator Platform |
| title_full | High Performance p-i-n Photodetectors on Ge-on-Insulator Platform |
| title_fullStr | High Performance p-i-n Photodetectors on Ge-on-Insulator Platform |
| title_full_unstemmed | High Performance p-i-n Photodetectors on Ge-on-Insulator Platform |
| title_short | High Performance p-i-n Photodetectors on Ge-on-Insulator Platform |
| title_sort | high performance p i n photodetectors on ge on insulator platform |
| topic | GOI photodetectors dark current responsivity |
| url | https://www.mdpi.com/2079-4991/11/5/1125 |
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