Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications
In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode lumin...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Beilstein-Institut
2017-09-01
|
| Series: | Beilstein Journal of Nanotechnology |
| Subjects: | |
| Online Access: | https://doi.org/10.3762/bjnano.8.194 |
| _version_ | 1828432288190300160 |
|---|---|
| author | Chin-Yi Tsai Jyong-Di Lai Shih-Wei Feng Chien-Jung Huang Chien-Hsun Chen Fann-Wei Yang Hsiang-Chen Wang Li-Wei Tu |
| author_facet | Chin-Yi Tsai Jyong-Di Lai Shih-Wei Feng Chien-Jung Huang Chien-Hsun Chen Fann-Wei Yang Hsiang-Chen Wang Li-Wei Tu |
| author_sort | Chin-Yi Tsai |
| collection | DOAJ |
| description | In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate, while both of them are much larger than that on the textured Si(100) substrate. The average grain sizes (about 10–50 nm) of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT) solar cells. |
| first_indexed | 2024-12-10T18:17:41Z |
| format | Article |
| id | doaj.art-bfe8fc5bc6d34c0a9e019f46658e143c |
| institution | Directory Open Access Journal |
| issn | 2190-4286 |
| language | English |
| last_indexed | 2024-12-10T18:17:41Z |
| publishDate | 2017-09-01 |
| publisher | Beilstein-Institut |
| record_format | Article |
| series | Beilstein Journal of Nanotechnology |
| spelling | doaj.art-bfe8fc5bc6d34c0a9e019f46658e143c2022-12-22T01:38:18ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862017-09-01811939194510.3762/bjnano.8.1942190-4286-8-194Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applicationsChin-Yi Tsai0Jyong-Di Lai1Shih-Wei Feng2Chien-Jung Huang3Chien-Hsun Chen4Fann-Wei Yang5Hsiang-Chen Wang6Li-Wei Tu7Department of Applied Physics, National University of Kaohsiung, No.700, Kaohsiung University Road, Nanzih Dist., Kaohsiung 811, Taiwan, R.O.CDepartment of Applied Physics, National University of Kaohsiung, No.700, Kaohsiung University Road, Nanzih Dist., Kaohsiung 811, Taiwan, R.O.CDepartment of Applied Physics, National University of Kaohsiung, No.700, Kaohsiung University Road, Nanzih Dist., Kaohsiung 811, Taiwan, R.O.CDepartment of Applied Physics, National University of Kaohsiung, No.700, Kaohsiung University Road, Nanzih Dist., Kaohsiung 811, Taiwan, R.O.CGreen Energy and Environment Research Labs, Industrial Technology Research Institute, Hsinchu, Taiwan, R.O.CDepartment of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan, Taiwan, R.O.CGraduate Institute of Opto-Mechatronics, National Chung Cheng University, Chia-yi, Taiwan, R.O.CDepartment of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, R.O.CIn this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate, while both of them are much larger than that on the textured Si(100) substrate. The average grain sizes (about 10–50 nm) of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT) solar cells.https://doi.org/10.3762/bjnano.8.194atomic force microscopycathode luminescencescanning electron microscopysilicon solar cellstransparent conducting oxideX-ray diffractionZnO |
| spellingShingle | Chin-Yi Tsai Jyong-Di Lai Shih-Wei Feng Chien-Jung Huang Chien-Hsun Chen Fann-Wei Yang Hsiang-Chen Wang Li-Wei Tu Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications Beilstein Journal of Nanotechnology atomic force microscopy cathode luminescence scanning electron microscopy silicon solar cells transparent conducting oxide X-ray diffraction ZnO |
| title | Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications |
| title_full | Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications |
| title_fullStr | Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications |
| title_full_unstemmed | Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications |
| title_short | Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications |
| title_sort | growth and characterization of textured well faceted zno on planar si 100 planar si 111 and textured si 100 substrates for solar cell applications |
| topic | atomic force microscopy cathode luminescence scanning electron microscopy silicon solar cells transparent conducting oxide X-ray diffraction ZnO |
| url | https://doi.org/10.3762/bjnano.8.194 |
| work_keys_str_mv | AT chinyitsai growthandcharacterizationoftexturedwellfacetedznoonplanarsi100planarsi111andtexturedsi100substratesforsolarcellapplications AT jyongdilai growthandcharacterizationoftexturedwellfacetedznoonplanarsi100planarsi111andtexturedsi100substratesforsolarcellapplications AT shihweifeng growthandcharacterizationoftexturedwellfacetedznoonplanarsi100planarsi111andtexturedsi100substratesforsolarcellapplications AT chienjunghuang growthandcharacterizationoftexturedwellfacetedznoonplanarsi100planarsi111andtexturedsi100substratesforsolarcellapplications AT chienhsunchen growthandcharacterizationoftexturedwellfacetedznoonplanarsi100planarsi111andtexturedsi100substratesforsolarcellapplications AT fannweiyang growthandcharacterizationoftexturedwellfacetedznoonplanarsi100planarsi111andtexturedsi100substratesforsolarcellapplications AT hsiangchenwang growthandcharacterizationoftexturedwellfacetedznoonplanarsi100planarsi111andtexturedsi100substratesforsolarcellapplications AT liweitu growthandcharacterizationoftexturedwellfacetedznoonplanarsi100planarsi111andtexturedsi100substratesforsolarcellapplications |