Combined Effect of TID Radiation and Electrical Stress on NMOSFETs

Combined Effect of TID Radiation and Electrical Stress on NMOSFETs

The combined effect of total ionizing dose (TID) and electrical stress is investigated on NMOSFETs. For devices bearing both radiation and electrical stress, the threshold voltage shift is smaller than those only bearing electrical stress, indicating that the combined effect alleviates the degradati...

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Bibliographic Details
Main Authors: Yanrong Cao, Min Wang, Xuefeng Zheng, Enxia Zhang, Ling Lv, Liang Wang, Maodan Ma, Hanghang Lv, Zhiheng Wang, Yongkun Wang, Wenchao Tian, Xiaohua Ma, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Micromachines
Subjects:
TID
electrical stress
combined effect
NMOSFETs
Online Access:https://www.mdpi.com/2072-666X/13/11/1860

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