Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO<sub>4</sub>) Thin Films
The low-temperature processability of molecular ferroelectric (FE) crystals makes them a potential alternative for perovskite oxide-based ferroelectric thin films. Quinuclidinium perrhenate (HQReO<sub>4</sub>) is one such molecular FE crystal that exhibits ferroelectricity when crystalli...
Main Authors: | , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-04-01
|
Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/14/9/2126 |
_version_ | 1797536738479964160 |
---|---|
author | Junyoung Lee Woojun Seol Gopinathan Anoop Shibnath Samanta Sanjith Unithrattil Dante Ahn Woochul Kim Gunyoung Jung Jiyoung Jo |
author_facet | Junyoung Lee Woojun Seol Gopinathan Anoop Shibnath Samanta Sanjith Unithrattil Dante Ahn Woochul Kim Gunyoung Jung Jiyoung Jo |
author_sort | Junyoung Lee |
collection | DOAJ |
description | The low-temperature processability of molecular ferroelectric (FE) crystals makes them a potential alternative for perovskite oxide-based ferroelectric thin films. Quinuclidinium perrhenate (HQReO<sub>4</sub>) is one such molecular FE crystal that exhibits ferroelectricity when crystallized in an intermediate temperature phase (ITP). However, bulk HQReO<sub>4</sub> crystals exhibit ferroelectricity only for a narrow temperature window (22 K), above and below which the polar phase transforms to a non-FE phase. The FE phase or ITP of HQReO<sub>4</sub> should be stabilized in a much wider temperature range for practical applications. Here, to stabilize the FE phase (ITP) in a wider temperature range, highly oriented thin films of HQReO<sub>4</sub> were prepared using a simple solution process. A slow evaporation method was adapted for drying the HQReO<sub>4</sub> thin films to control the morphology and the temperature window. The temperature window of the intermediate temperature FE phase was successfully widened up to 35 K by merely varying the film drying temperature between 333 and 353 K. The strategy of stabilizing the FE phase in a wider temperature range can be adapted to other molecular FE materials to realize flexible electronic devices. |
first_indexed | 2024-03-10T12:05:04Z |
format | Article |
id | doaj.art-c0184e3b66544bd1b9ce24134f8a0d73 |
institution | Directory Open Access Journal |
issn | 1996-1944 |
language | English |
last_indexed | 2024-03-10T12:05:04Z |
publishDate | 2021-04-01 |
publisher | MDPI AG |
record_format | Article |
series | Materials |
spelling | doaj.art-c0184e3b66544bd1b9ce24134f8a0d732023-11-21T16:41:06ZengMDPI AGMaterials1996-19442021-04-01149212610.3390/ma14092126Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO<sub>4</sub>) Thin FilmsJunyoung Lee0Woojun Seol1Gopinathan Anoop2Shibnath Samanta3Sanjith Unithrattil4Dante Ahn5Woochul Kim6Gunyoung Jung7Jiyoung Jo8School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaSchool of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, KoreaThe low-temperature processability of molecular ferroelectric (FE) crystals makes them a potential alternative for perovskite oxide-based ferroelectric thin films. Quinuclidinium perrhenate (HQReO<sub>4</sub>) is one such molecular FE crystal that exhibits ferroelectricity when crystallized in an intermediate temperature phase (ITP). However, bulk HQReO<sub>4</sub> crystals exhibit ferroelectricity only for a narrow temperature window (22 K), above and below which the polar phase transforms to a non-FE phase. The FE phase or ITP of HQReO<sub>4</sub> should be stabilized in a much wider temperature range for practical applications. Here, to stabilize the FE phase (ITP) in a wider temperature range, highly oriented thin films of HQReO<sub>4</sub> were prepared using a simple solution process. A slow evaporation method was adapted for drying the HQReO<sub>4</sub> thin films to control the morphology and the temperature window. The temperature window of the intermediate temperature FE phase was successfully widened up to 35 K by merely varying the film drying temperature between 333 and 353 K. The strategy of stabilizing the FE phase in a wider temperature range can be adapted to other molecular FE materials to realize flexible electronic devices.https://www.mdpi.com/1996-1944/14/9/2126quinuclidinium perrhenateplastic crystalsmolecular ferroelectric crystalsferroelectricity |
spellingShingle | Junyoung Lee Woojun Seol Gopinathan Anoop Shibnath Samanta Sanjith Unithrattil Dante Ahn Woochul Kim Gunyoung Jung Jiyoung Jo Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO<sub>4</sub>) Thin Films Materials quinuclidinium perrhenate plastic crystals molecular ferroelectric crystals ferroelectricity |
title | Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO<sub>4</sub>) Thin Films |
title_full | Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO<sub>4</sub>) Thin Films |
title_fullStr | Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO<sub>4</sub>) Thin Films |
title_full_unstemmed | Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO<sub>4</sub>) Thin Films |
title_short | Stabilization of Ferroelectric Phase in Highly Oriented Quinuclidinium Perrhenate (HQReO<sub>4</sub>) Thin Films |
title_sort | stabilization of ferroelectric phase in highly oriented quinuclidinium perrhenate hqreo sub 4 sub thin films |
topic | quinuclidinium perrhenate plastic crystals molecular ferroelectric crystals ferroelectricity |
url | https://www.mdpi.com/1996-1944/14/9/2126 |
work_keys_str_mv | AT junyounglee stabilizationofferroelectricphaseinhighlyorientedquinuclidiniumperrhenatehqreosub4subthinfilms AT woojunseol stabilizationofferroelectricphaseinhighlyorientedquinuclidiniumperrhenatehqreosub4subthinfilms AT gopinathananoop stabilizationofferroelectricphaseinhighlyorientedquinuclidiniumperrhenatehqreosub4subthinfilms AT shibnathsamanta stabilizationofferroelectricphaseinhighlyorientedquinuclidiniumperrhenatehqreosub4subthinfilms AT sanjithunithrattil stabilizationofferroelectricphaseinhighlyorientedquinuclidiniumperrhenatehqreosub4subthinfilms AT danteahn stabilizationofferroelectricphaseinhighlyorientedquinuclidiniumperrhenatehqreosub4subthinfilms AT woochulkim stabilizationofferroelectricphaseinhighlyorientedquinuclidiniumperrhenatehqreosub4subthinfilms AT gunyoungjung stabilizationofferroelectricphaseinhighlyorientedquinuclidiniumperrhenatehqreosub4subthinfilms AT jiyoungjo stabilizationofferroelectricphaseinhighlyorientedquinuclidiniumperrhenatehqreosub4subthinfilms |