High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface
A perovskite oxide, BaSnO3, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO3-based heterostructures with atomically smooth...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2016-08-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4961637 |
| _version_ | 1811264228409999360 |
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| author | Kohei Fujiwara Kazuki Nishihara Junichi Shiogai Atsushi Tsukazaki |
| author_facet | Kohei Fujiwara Kazuki Nishihara Junichi Shiogai Atsushi Tsukazaki |
| author_sort | Kohei Fujiwara |
| collection | DOAJ |
| description | A perovskite oxide, BaSnO3, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO3-based heterostructures with atomically smooth surfaces, fabricated on SrTiO3 substrates by the (Sr,Ba)SnO3 buffer technique. Indeed, modulation of band profiles at the channel interfaces with the insertion of wide bandgap (Sr,Ba)SnO3 as a barrier layer results in a significant improvement of field-effect mobility, implying effective carrier doping at the regulated heterointerface. These results provide an important step towards realization of high-performance BaSnO3-based field-effect transistors. |
| first_indexed | 2024-04-12T19:59:20Z |
| format | Article |
| id | doaj.art-c01ecd156365456892a631126d4ad4ab |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-12T19:59:20Z |
| publishDate | 2016-08-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-c01ecd156365456892a631126d4ad4ab2022-12-22T03:18:35ZengAIP Publishing LLCAIP Advances2158-32262016-08-0168085014085014-610.1063/1.4961637052608ADVHigh field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interfaceKohei Fujiwara0Kazuki Nishihara1Junichi Shiogai2Atsushi Tsukazaki3Institute for Materials Research, Tohoku University, Sendai 980-8577, JapanInstitute for Materials Research, Tohoku University, Sendai 980-8577, JapanInstitute for Materials Research, Tohoku University, Sendai 980-8577, JapanInstitute for Materials Research, Tohoku University, Sendai 980-8577, JapanA perovskite oxide, BaSnO3, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO3-based heterostructures with atomically smooth surfaces, fabricated on SrTiO3 substrates by the (Sr,Ba)SnO3 buffer technique. Indeed, modulation of band profiles at the channel interfaces with the insertion of wide bandgap (Sr,Ba)SnO3 as a barrier layer results in a significant improvement of field-effect mobility, implying effective carrier doping at the regulated heterointerface. These results provide an important step towards realization of high-performance BaSnO3-based field-effect transistors.http://dx.doi.org/10.1063/1.4961637 |
| spellingShingle | Kohei Fujiwara Kazuki Nishihara Junichi Shiogai Atsushi Tsukazaki High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface AIP Advances |
| title | High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface |
| title_full | High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface |
| title_fullStr | High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface |
| title_full_unstemmed | High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface |
| title_short | High field-effect mobility at the (Sr,Ba)SnO3/BaSnO3 interface |
| title_sort | high field effect mobility at the sr ba sno3 basno3 interface |
| url | http://dx.doi.org/10.1063/1.4961637 |
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