Resonance Raman Spectroscopy of Mn-Mg<i><sub>k</sub></i> Cation Complexes in GaN

Resonance Raman analysis is performed in order to gain insight into the nature of impurity-induced Raman features in GaN:(Mn,Mg) hosting Mn-Mg<i><sub>k</sub></i> cation complexes and representing a prospective strategic material for the realization of full-nitride photonic de...

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Main Authors: Andrii Nikolenko, Viktor Strelchuk, Bogdan Tsykaniuk, Dmytro Kysylychyn, Giulia Capuzzo, Alberta Bonanni
Format: Article
Language:English
Published: MDPI AG 2019-05-01
Series:Crystals
Subjects:
Online Access:https://www.mdpi.com/2073-4352/9/5/235
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author Andrii Nikolenko
Viktor Strelchuk
Bogdan Tsykaniuk
Dmytro Kysylychyn
Giulia Capuzzo
Alberta Bonanni
author_facet Andrii Nikolenko
Viktor Strelchuk
Bogdan Tsykaniuk
Dmytro Kysylychyn
Giulia Capuzzo
Alberta Bonanni
author_sort Andrii Nikolenko
collection DOAJ
description Resonance Raman analysis is performed in order to gain insight into the nature of impurity-induced Raman features in GaN:(Mn,Mg) hosting Mn-Mg<i><sub>k</sub></i> cation complexes and representing a prospective strategic material for the realization of full-nitride photonic devices emitting in the infra-red. It is found that in contrast to the case of GaN:Mn, the resonance enhancement of Mn-induced modes at sub-band excitation in Mg co-doped samples is not observed at an excitation of 2.4 eV, but shifts to lower energies, an effect explained by a resonance process involving photoionization of a hole from the donor level of Mn to the valence band of GaN. Selective excitation within the resonance Raman conditions allows the structure of the main Mn-induced phonon band at ~670 cm<sup>&#8722;1</sup> to be resolved into two distinct components, whose relative intensity varies with the Mg/Mn ratio and correlates with the concentration of different Mn-Mg<i><sub>k</sub></i> cation complexes. Moreover, from the relative intensity of the 2LO and 1LO Raman resonances at inter-band excitation energy, the Huang-Rhys parameter has been estimated and, consequently, the strength of the electron-phonon interaction, which is found to increase linearly with the Mg/Mn ratio. Selective temperature-dependent enhancement of the high-order multiphonon peaks is due to variation in resonance conditions of exciton-mediated outgoing resonance Raman scattering by detuning the band gap.
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spelling doaj.art-c03bb89cf4064110b5045151bb7d5ede2022-12-22T02:21:46ZengMDPI AGCrystals2073-43522019-05-019523510.3390/cryst9050235cryst9050235Resonance Raman Spectroscopy of Mn-Mg<i><sub>k</sub></i> Cation Complexes in GaNAndrii Nikolenko0Viktor Strelchuk1Bogdan Tsykaniuk2Dmytro Kysylychyn3Giulia Capuzzo4Alberta Bonanni5V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, UkraineV. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine, 41 Nauky pr., 03028 Kyiv, UkraineInstitut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, AustriaInstitut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, AustriaInstitut für Halbleiter-und-Festkörperphysik, Johannes Kepler University, Altenbergerstr. 69, A-4040 Linz, AustriaResonance Raman analysis is performed in order to gain insight into the nature of impurity-induced Raman features in GaN:(Mn,Mg) hosting Mn-Mg<i><sub>k</sub></i> cation complexes and representing a prospective strategic material for the realization of full-nitride photonic devices emitting in the infra-red. It is found that in contrast to the case of GaN:Mn, the resonance enhancement of Mn-induced modes at sub-band excitation in Mg co-doped samples is not observed at an excitation of 2.4 eV, but shifts to lower energies, an effect explained by a resonance process involving photoionization of a hole from the donor level of Mn to the valence band of GaN. Selective excitation within the resonance Raman conditions allows the structure of the main Mn-induced phonon band at ~670 cm<sup>&#8722;1</sup> to be resolved into two distinct components, whose relative intensity varies with the Mg/Mn ratio and correlates with the concentration of different Mn-Mg<i><sub>k</sub></i> cation complexes. Moreover, from the relative intensity of the 2LO and 1LO Raman resonances at inter-band excitation energy, the Huang-Rhys parameter has been estimated and, consequently, the strength of the electron-phonon interaction, which is found to increase linearly with the Mg/Mn ratio. Selective temperature-dependent enhancement of the high-order multiphonon peaks is due to variation in resonance conditions of exciton-mediated outgoing resonance Raman scattering by detuning the band gap.https://www.mdpi.com/2073-4352/9/5/235metal-organic vapor phase epitaxyIII-nitridescation complexesresonance Raman spectroscopyelectron-phonon interaction
spellingShingle Andrii Nikolenko
Viktor Strelchuk
Bogdan Tsykaniuk
Dmytro Kysylychyn
Giulia Capuzzo
Alberta Bonanni
Resonance Raman Spectroscopy of Mn-Mg<i><sub>k</sub></i> Cation Complexes in GaN
Crystals
metal-organic vapor phase epitaxy
III-nitrides
cation complexes
resonance Raman spectroscopy
electron-phonon interaction
title Resonance Raman Spectroscopy of Mn-Mg<i><sub>k</sub></i> Cation Complexes in GaN
title_full Resonance Raman Spectroscopy of Mn-Mg<i><sub>k</sub></i> Cation Complexes in GaN
title_fullStr Resonance Raman Spectroscopy of Mn-Mg<i><sub>k</sub></i> Cation Complexes in GaN
title_full_unstemmed Resonance Raman Spectroscopy of Mn-Mg<i><sub>k</sub></i> Cation Complexes in GaN
title_short Resonance Raman Spectroscopy of Mn-Mg<i><sub>k</sub></i> Cation Complexes in GaN
title_sort resonance raman spectroscopy of mn mg i sub k sub i cation complexes in gan
topic metal-organic vapor phase epitaxy
III-nitrides
cation complexes
resonance Raman spectroscopy
electron-phonon interaction
url https://www.mdpi.com/2073-4352/9/5/235
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