Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †
InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffractio...
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MDPI AG
2018-08-01
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| Series: | Sensors |
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| Online Access: | http://www.mdpi.com/1424-8220/18/9/2795 |
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| author | Pin-Guang Chen Kuan-Ting Chen Ming Tang Zheng-Ying Wang Yu-Chen Chou Min-Hung Lee |
| author_facet | Pin-Guang Chen Kuan-Ting Chen Ming Tang Zheng-Ying Wang Yu-Chen Chou Min-Hung Lee |
| author_sort | Pin-Guang Chen |
| collection | DOAJ |
| description | InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors. |
| first_indexed | 2024-04-11T20:54:04Z |
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| id | doaj.art-c046bc9520bc48268bed684bdcada48b |
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| language | English |
| last_indexed | 2024-04-11T20:54:04Z |
| publishDate | 2018-08-01 |
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| series | Sensors |
| spelling | doaj.art-c046bc9520bc48268bed684bdcada48b2022-12-22T04:03:45ZengMDPI AGSensors1424-82202018-08-01189279510.3390/s18092795s18092795Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †Pin-Guang Chen0Kuan-Ting Chen1Ming Tang2Zheng-Ying Wang3Yu-Chen Chou4Min-Hung Lee5Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, TaiwanInstitute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, TaiwanDevice Design Division, PTEK Technology Co., Ltd., Hsinchu 30059, TaiwanInstitute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, TaiwanInstitute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, TaiwanInstitute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, TaiwanInAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors.http://www.mdpi.com/1424-8220/18/9/2795InAlNswingwafer-scalehigh-electron-mobility transistor (HEMT) |
| spellingShingle | Pin-Guang Chen Kuan-Ting Chen Ming Tang Zheng-Ying Wang Yu-Chen Chou Min-Hung Lee Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications † Sensors InAlN swing wafer-scale high-electron-mobility transistor (HEMT) |
| title | Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications † |
| title_full | Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications † |
| title_fullStr | Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications † |
| title_full_unstemmed | Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications † |
| title_short | Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications † |
| title_sort | steep switching of in0 18al0 82n aln gan mis hemt metal insulator semiconductor high electron mobility transistors on si for sensor applications † |
| topic | InAlN swing wafer-scale high-electron-mobility transistor (HEMT) |
| url | http://www.mdpi.com/1424-8220/18/9/2795 |
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