Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

Steep Switching of In0.18Al0.82N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications †

InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffractio...

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Bibliographic Details
Main Authors: Pin-Guang Chen, Kuan-Ting Chen, Ming Tang, Zheng-Ying Wang, Yu-Chen Chou, Min-Hung Lee
Format: Article
Language:English
Published: MDPI AG 2018-08-01
Series:Sensors
Subjects:
InAlN
swing
wafer-scale
high-electron-mobility transistor (HEMT)
Online Access:http://www.mdpi.com/1424-8220/18/9/2795

Internet

http://www.mdpi.com/1424-8220/18/9/2795

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