Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals
In this paper, the effects of oxygen vacancy and gallium vacancy on the optical and scintillation properties of undoped β-Ga<sub>2</sub>O<sub>3</sub> crystal and 2.5 mol % Al doped gallium oxide were investigated. For the undoped β-Ga<sub>2</sub>O<sub>3</...
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MDPI AG
2022-03-01
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| Online Access: | https://www.mdpi.com/2073-4352/12/3/429 |
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| author | Ruifeng Tian Mingyan Pan Qinglin Sai Lu Zhang Hongji Qi Hany Fathy Mohamed |
| author_facet | Ruifeng Tian Mingyan Pan Qinglin Sai Lu Zhang Hongji Qi Hany Fathy Mohamed |
| author_sort | Ruifeng Tian |
| collection | DOAJ |
| description | In this paper, the effects of oxygen vacancy and gallium vacancy on the optical and scintillation properties of undoped β-Ga<sub>2</sub>O<sub>3</sub> crystal and 2.5 mol % Al doped gallium oxide were investigated. For the undoped β-Ga<sub>2</sub>O<sub>3</sub>, the transmittance is improved after annealing in oxygen or nitrogen atmosphere. After the introduction of Al element, the absorption cutoff appears slightly blue shift, and the band gap increases. For the undoped as-grown β-Ga<sub>2</sub>O<sub>3</sub> single crystals, the decay time consists of a fast component (τ<sub>1</sub>) of the order of nanoseconds, and two slow components (τ<sub>2</sub>, τ<sub>3</sub>) of tens to hundreds of nanoseconds. The contribution of the fast decay time component in the decay times is 2.78%. While for Al-doped β-Ga<sub>2</sub>O<sub>3</sub>, the faster (τ<sub>1</sub>) time is 2.33 ns for the as-grown one, and the contribution is 68.02%. However, the pulse height spectrum shows that the introduction of 2.5 mol % Al will reduce the light yield of the β-Ga<sub>2</sub>O<sub>3</sub> crystal. |
| first_indexed | 2024-03-09T13:47:28Z |
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| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-09T13:47:28Z |
| publishDate | 2022-03-01 |
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| spelling | doaj.art-c04d7b1779aa4aa5b2b0a1ba8abe75b22023-11-30T20:58:07ZengMDPI AGCrystals2073-43522022-03-0112342910.3390/cryst12030429Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single CrystalsRuifeng Tian0Mingyan Pan1Qinglin Sai2Lu Zhang3Hongji Qi4Hany Fathy Mohamed5Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, ChinaKey Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, ChinaIn this paper, the effects of oxygen vacancy and gallium vacancy on the optical and scintillation properties of undoped β-Ga<sub>2</sub>O<sub>3</sub> crystal and 2.5 mol % Al doped gallium oxide were investigated. For the undoped β-Ga<sub>2</sub>O<sub>3</sub>, the transmittance is improved after annealing in oxygen or nitrogen atmosphere. After the introduction of Al element, the absorption cutoff appears slightly blue shift, and the band gap increases. For the undoped as-grown β-Ga<sub>2</sub>O<sub>3</sub> single crystals, the decay time consists of a fast component (τ<sub>1</sub>) of the order of nanoseconds, and two slow components (τ<sub>2</sub>, τ<sub>3</sub>) of tens to hundreds of nanoseconds. The contribution of the fast decay time component in the decay times is 2.78%. While for Al-doped β-Ga<sub>2</sub>O<sub>3</sub>, the faster (τ<sub>1</sub>) time is 2.33 ns for the as-grown one, and the contribution is 68.02%. However, the pulse height spectrum shows that the introduction of 2.5 mol % Al will reduce the light yield of the β-Ga<sub>2</sub>O<sub>3</sub> crystal.https://www.mdpi.com/2073-4352/12/3/429Al-doped β-Ga<sub>2</sub>O<sub>3</sub>scintillationoxygen vacancies |
| spellingShingle | Ruifeng Tian Mingyan Pan Qinglin Sai Lu Zhang Hongji Qi Hany Fathy Mohamed Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals Crystals Al-doped β-Ga<sub>2</sub>O<sub>3</sub> scintillation oxygen vacancies |
| title | Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals |
| title_full | Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals |
| title_fullStr | Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals |
| title_full_unstemmed | Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals |
| title_short | Crucial Role of Oxygen Vacancies in Scintillation and Optical Properties of Undoped and Al-Doped β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals |
| title_sort | crucial role of oxygen vacancies in scintillation and optical properties of undoped and al doped β ga sub 2 sub o sub 3 sub single crystals |
| topic | Al-doped β-Ga<sub>2</sub>O<sub>3</sub> scintillation oxygen vacancies |
| url | https://www.mdpi.com/2073-4352/12/3/429 |
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