Coexistence of memory and threshold switching behaviors in natural milk-based organic memristor

Natural biomaterials have attracted great interest for the fabrication of biocompatible memristors. Here, dense and smooth milk films were deposited on the Pt/SiO _2 /Si substrate by spin-coating method and resistive switching (RS) devices based milk films with the configuration of Ag/milk/Pt/SiO _2...

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Main Authors: Peng Zhang, Jiahui Zhang, Kunjie Wang, Li Wang, Xianrong Liu, Yan Jing, Benhua Xu
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
Online Access:https://doi.org/10.1088/2053-1591/ac03ed
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author Peng Zhang
Jiahui Zhang
Kunjie Wang
Li Wang
Xianrong Liu
Yan Jing
Benhua Xu
author_facet Peng Zhang
Jiahui Zhang
Kunjie Wang
Li Wang
Xianrong Liu
Yan Jing
Benhua Xu
author_sort Peng Zhang
collection DOAJ
description Natural biomaterials have attracted great interest for the fabrication of biocompatible memristors. Here, dense and smooth milk films were deposited on the Pt/SiO _2 /Si substrate by spin-coating method and resistive switching (RS) devices based milk films with the configuration of Ag/milk/Pt/SiO _2 /Si are fabricated for the first time. Furthermore, memory RS (MRS) and threshold RS (TRS) effects coexist in the devices, which can be controlled by appropriately setting the compliance current ( I _cc ). The current conduction mechanisms of the devices with MRS and TRS effects are controlled by typical trap-controlled space charge limited current (SCLC) conduction and filamentary conduction mechanism. The good RS performances of the milk-based devices make them promising for sustainable bioelectronics and novel logic device applications.
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spelling doaj.art-c0533caa86ed4217bc66c0c9baa442ac2023-08-09T16:05:46ZengIOP PublishingMaterials Research Express2053-15912021-01-018606630110.1088/2053-1591/ac03edCoexistence of memory and threshold switching behaviors in natural milk-based organic memristorPeng Zhang0https://orcid.org/0000-0002-9418-0684Jiahui Zhang1Kunjie Wang2Li Wang3Xianrong Liu4Yan Jing5Benhua Xu6Qinghai Provincial Key Laboratory of New Light Alloys, Qinghai Provincial Engineering Research Center of High-Performance Light Metal Alloys and Forming, Qinghai University , Xining 810016, People’s Republic of ChinaQinghai Provincial Key Laboratory of New Light Alloys, Qinghai Provincial Engineering Research Center of High-Performance Light Metal Alloys and Forming, Qinghai University , Xining 810016, People’s Republic of ChinaQinghai Provincial Key Laboratory of New Light Alloys, Qinghai Provincial Engineering Research Center of High-Performance Light Metal Alloys and Forming, Qinghai University , Xining 810016, People’s Republic of ChinaCollege of Chemistry and Chemical Engineering, Xi’ an Shiyou University , Xi’an 710065, People’s Republic of ChinaQinghai Provincial Key Laboratory of New Light Alloys, Qinghai Provincial Engineering Research Center of High-Performance Light Metal Alloys and Forming, Qinghai University , Xining 810016, People’s Republic of ChinaChemical Engineering College, Qinghai University , Xining 810016, People’s Republic of ChinaChemical Engineering College, Qinghai University , Xining 810016, People’s Republic of ChinaNatural biomaterials have attracted great interest for the fabrication of biocompatible memristors. Here, dense and smooth milk films were deposited on the Pt/SiO _2 /Si substrate by spin-coating method and resistive switching (RS) devices based milk films with the configuration of Ag/milk/Pt/SiO _2 /Si are fabricated for the first time. Furthermore, memory RS (MRS) and threshold RS (TRS) effects coexist in the devices, which can be controlled by appropriately setting the compliance current ( I _cc ). The current conduction mechanisms of the devices with MRS and TRS effects are controlled by typical trap-controlled space charge limited current (SCLC) conduction and filamentary conduction mechanism. The good RS performances of the milk-based devices make them promising for sustainable bioelectronics and novel logic device applications.https://doi.org/10.1088/2053-1591/ac03edorganic memristormemory resistive switchingthreshold resistive switchingnatural biomaterialsspin-coating
spellingShingle Peng Zhang
Jiahui Zhang
Kunjie Wang
Li Wang
Xianrong Liu
Yan Jing
Benhua Xu
Coexistence of memory and threshold switching behaviors in natural milk-based organic memristor
Materials Research Express
organic memristor
memory resistive switching
threshold resistive switching
natural biomaterials
spin-coating
title Coexistence of memory and threshold switching behaviors in natural milk-based organic memristor
title_full Coexistence of memory and threshold switching behaviors in natural milk-based organic memristor
title_fullStr Coexistence of memory and threshold switching behaviors in natural milk-based organic memristor
title_full_unstemmed Coexistence of memory and threshold switching behaviors in natural milk-based organic memristor
title_short Coexistence of memory and threshold switching behaviors in natural milk-based organic memristor
title_sort coexistence of memory and threshold switching behaviors in natural milk based organic memristor
topic organic memristor
memory resistive switching
threshold resistive switching
natural biomaterials
spin-coating
url https://doi.org/10.1088/2053-1591/ac03ed
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AT liwang coexistenceofmemoryandthresholdswitchingbehaviorsinnaturalmilkbasedorganicmemristor
AT xianrongliu coexistenceofmemoryandthresholdswitchingbehaviorsinnaturalmilkbasedorganicmemristor
AT yanjing coexistenceofmemoryandthresholdswitchingbehaviorsinnaturalmilkbasedorganicmemristor
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