Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

Demonstration of Planar Type-II Superlattice-Based Photodetectors Using Silicon Ion-Implantation

In this letter, we report the demonstration of a pBn planar mid-wavelength infrared photodetectors based on type-II InAs/InAs<sub>1−x</sub>Sb<sub>x</sub> superlattices, using silicon ion-implantation to isolate the devices. At 77 K the photodetectors exhibited peak responsivi...

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Bibliographic Details
Main Authors: Arash Dehzangi, Donghai Wu, Ryan McClintock, Jiakai Li, Alexander Jaud, Manijeh Razeghi
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Photonics
Subjects:
planar structure
ion implantation
type II superlattice
quantum efficiency
implantation energy
Online Access:https://www.mdpi.com/2304-6732/7/3/68

Internet

https://www.mdpi.com/2304-6732/7/3/68

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