Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics
The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates un...
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| Format: | Article |
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MDPI AG
2020-07-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/13/15/3802 |
| _version_ | 1797561467854127104 |
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| author | Maosheng Zhang Na Ren Qing Guo Kuang Sheng |
| author_facet | Maosheng Zhang Na Ren Qing Guo Kuang Sheng |
| author_sort | Maosheng Zhang |
| collection | DOAJ |
| description | The SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates under inappropriate conditions, the advantages of the SiC high-power module will be probably eliminated. In this paper, four kinds of SiC high-power modules are fabricated to investigate fast switching performance. The variations in characteristics of drain-source voltage at turn-on transient under the combined conditions of multiple factors are studied. A characteristic of voltage plateau is observed from the drain-source voltage waveform at turn-on transient in the experiments, and the characteristic is reproduced by simulation. The mechanism behind the voltage plateau is studied, and it is revealed that the characteristic of drain-source voltage plateau is a reflection of the miller plateau effect of gate-source voltage on drain-source voltage under the combined conditions of fast turn-on speed and low DC bus voltage, while the different values of drain-source voltage plateau are attributed to the discrepancy of structure between upper-side and lower-side in the corresponding partial path of the drain circuit loop inside the module, with the standard 62 mm package outline. |
| first_indexed | 2024-03-10T18:14:22Z |
| format | Article |
| id | doaj.art-c061159e4f6240a4adcdad9508bbc12a |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-03-10T18:14:22Z |
| publishDate | 2020-07-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-c061159e4f6240a4adcdad9508bbc12a2023-11-20T07:49:46ZengMDPI AGEnergies1996-10732020-07-011315380210.3390/en13153802Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau CharacteristicsMaosheng Zhang0Na Ren1Qing Guo2Kuang Sheng3College of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaCollege of Electrical Engineering, Zhejiang University, Hangzhou 310027, ChinaThe SiC (silicon carbide) high-power module has great potential to replace the IGBT (insulated gate bipolar transistor) power module in high-frequency and high-power applications, due to the superior properties of fast switching and low power loss, however, when the SiC high-power module operates under inappropriate conditions, the advantages of the SiC high-power module will be probably eliminated. In this paper, four kinds of SiC high-power modules are fabricated to investigate fast switching performance. The variations in characteristics of drain-source voltage at turn-on transient under the combined conditions of multiple factors are studied. A characteristic of voltage plateau is observed from the drain-source voltage waveform at turn-on transient in the experiments, and the characteristic is reproduced by simulation. The mechanism behind the voltage plateau is studied, and it is revealed that the characteristic of drain-source voltage plateau is a reflection of the miller plateau effect of gate-source voltage on drain-source voltage under the combined conditions of fast turn-on speed and low DC bus voltage, while the different values of drain-source voltage plateau are attributed to the discrepancy of structure between upper-side and lower-side in the corresponding partial path of the drain circuit loop inside the module, with the standard 62 mm package outline.https://www.mdpi.com/1996-1073/13/15/3802power modulesilicon carbideturn-on transient |
| spellingShingle | Maosheng Zhang Na Ren Qing Guo Kuang Sheng Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics Energies power module silicon carbide turn-on transient |
| title | Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics |
| title_full | Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics |
| title_fullStr | Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics |
| title_full_unstemmed | Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics |
| title_short | Understanding Turn-On Transients of SiC High-Power Modules: Drain-Source Voltage Plateau Characteristics |
| title_sort | understanding turn on transients of sic high power modules drain source voltage plateau characteristics |
| topic | power module silicon carbide turn-on transient |
| url | https://www.mdpi.com/1996-1073/13/15/3802 |
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