Anomalous anisotropic magnetoresistance effects in graphene
We investigate the effect of external stimulus (temperature, magnetic field, and gases adsorptions) on anisotropic magnetoresistance (AMR) in multilayer graphene. The graphene sample shows superlinear magnetoresistance when magnetic field is perpendicular to the plane of graphene. A non-saturated AM...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4894519 |
| _version_ | 1818117058817163264 |
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| author | Yiwei Liu Rong Yang Huali Yang Duoming Wang Qingfeng Zhan Guangyu Zhang Yali Xie Bin Chen Run-Wei Li |
| author_facet | Yiwei Liu Rong Yang Huali Yang Duoming Wang Qingfeng Zhan Guangyu Zhang Yali Xie Bin Chen Run-Wei Li |
| author_sort | Yiwei Liu |
| collection | DOAJ |
| description | We investigate the effect of external stimulus (temperature, magnetic field, and gases adsorptions) on anisotropic magnetoresistance (AMR) in multilayer graphene. The graphene sample shows superlinear magnetoresistance when magnetic field is perpendicular to the plane of graphene. A non-saturated AMR with a value of −33% is found at 10 K under a magnetic field of 7 T. It is surprisingly to observe that a two-fold symmetric AMR at high temperature is changed into a one-fold one at low temperature for a sample with an irregular shape. The anomalous AMR behaviors may be understood by considering the anisotropic scattering of carriers from two asymmetric edges and the boundaries of V+(V-) electrodes which serve as active adsorption sites for gas molecules at low temperature. Our results indicate that AMR in graphene can be optimized by tuning the adsorptions, sample shape and electrode distribution in the future application. |
| first_indexed | 2024-12-11T04:32:23Z |
| format | Article |
| id | doaj.art-c0d785a25e7d4993bf09056631261daf |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-11T04:32:23Z |
| publishDate | 2014-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-c0d785a25e7d4993bf09056631261daf2022-12-22T01:20:49ZengAIP Publishing LLCAIP Advances2158-32262014-09-0149097101097101-710.1063/1.4894519041408ADVAnomalous anisotropic magnetoresistance effects in grapheneYiwei Liu0Rong Yang1Huali Yang2Duoming Wang3Qingfeng Zhan4Guangyu Zhang5Yali Xie6Bin Chen7Run-Wei Li8Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo 315201, People's Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of ChinaKey Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo 315201, People's Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of ChinaKey Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo 315201, People's Republic of ChinaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, People's Republic of ChinaKey Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo 315201, People's Republic of ChinaKey Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo 315201, People's Republic of ChinaKey Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Ningbo 315201, People's Republic of ChinaWe investigate the effect of external stimulus (temperature, magnetic field, and gases adsorptions) on anisotropic magnetoresistance (AMR) in multilayer graphene. The graphene sample shows superlinear magnetoresistance when magnetic field is perpendicular to the plane of graphene. A non-saturated AMR with a value of −33% is found at 10 K under a magnetic field of 7 T. It is surprisingly to observe that a two-fold symmetric AMR at high temperature is changed into a one-fold one at low temperature for a sample with an irregular shape. The anomalous AMR behaviors may be understood by considering the anisotropic scattering of carriers from two asymmetric edges and the boundaries of V+(V-) electrodes which serve as active adsorption sites for gas molecules at low temperature. Our results indicate that AMR in graphene can be optimized by tuning the adsorptions, sample shape and electrode distribution in the future application.http://dx.doi.org/10.1063/1.4894519 |
| spellingShingle | Yiwei Liu Rong Yang Huali Yang Duoming Wang Qingfeng Zhan Guangyu Zhang Yali Xie Bin Chen Run-Wei Li Anomalous anisotropic magnetoresistance effects in graphene AIP Advances |
| title | Anomalous anisotropic magnetoresistance effects in graphene |
| title_full | Anomalous anisotropic magnetoresistance effects in graphene |
| title_fullStr | Anomalous anisotropic magnetoresistance effects in graphene |
| title_full_unstemmed | Anomalous anisotropic magnetoresistance effects in graphene |
| title_short | Anomalous anisotropic magnetoresistance effects in graphene |
| title_sort | anomalous anisotropic magnetoresistance effects in graphene |
| url | http://dx.doi.org/10.1063/1.4894519 |
| work_keys_str_mv | AT yiweiliu anomalousanisotropicmagnetoresistanceeffectsingraphene AT rongyang anomalousanisotropicmagnetoresistanceeffectsingraphene AT hualiyang anomalousanisotropicmagnetoresistanceeffectsingraphene AT duomingwang anomalousanisotropicmagnetoresistanceeffectsingraphene AT qingfengzhan anomalousanisotropicmagnetoresistanceeffectsingraphene AT guangyuzhang anomalousanisotropicmagnetoresistanceeffectsingraphene AT yalixie anomalousanisotropicmagnetoresistanceeffectsingraphene AT binchen anomalousanisotropicmagnetoresistanceeffectsingraphene AT runweili anomalousanisotropicmagnetoresistanceeffectsingraphene |