The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2
Theoretical calculation and experimental measurement have shown that twin grain boundary (GB) of molybdenum disulphide (MoS2) exhibits extraordinary effects on transport properties. Precise transport measurements need to verify the transport mechanism of twin GB in MoS2. Here, monolayer molybdenum d...
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| Language: | English |
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MDPI AG
2016-09-01
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| Series: | Crystals |
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| Online Access: | http://www.mdpi.com/2073-4352/6/9/115 |
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| author | Luojun Du Hua Yu Li Xie Shuang Wu Shuopei Wang Xiaobo Lu Mengzhou Liao Jianling Meng Jing Zhao Jing Zhang Jianqi Zhu Peng Chen Guole Wang Rong Yang Dongxia Shi Guangyu Zhang |
| author_facet | Luojun Du Hua Yu Li Xie Shuang Wu Shuopei Wang Xiaobo Lu Mengzhou Liao Jianling Meng Jing Zhao Jing Zhang Jianqi Zhu Peng Chen Guole Wang Rong Yang Dongxia Shi Guangyu Zhang |
| author_sort | Luojun Du |
| collection | DOAJ |
| description | Theoretical calculation and experimental measurement have shown that twin grain boundary (GB) of molybdenum disulphide (MoS2) exhibits extraordinary effects on transport properties. Precise transport measurements need to verify the transport mechanism of twin GB in MoS2. Here, monolayer molybdenum disulphide with a twin grain boundary was grown in our developed low-pressure chemical vapor deposition (CVD) system, and we investigated how the twin GB affects the electrical transport properties of MoS2 by temperature-dependent transport studies. At low temperature, the twin GB can increase the in-plane electrical conductivity of MoS2 and the transport exhibits variable-range hopping (VRH), while at high temperature, the twin GB impedes the electrical transport of MoS2 and the transport exhibits nearest-neighbor hopping (NNH). Our results elucidate carrier transport mechanism of twin GB and give an important indication of twin GB in tailoring the electronic properties of MoS2 for its applications in next-generation electronics and optoelectronic devices. |
| first_indexed | 2024-04-11T13:36:49Z |
| format | Article |
| id | doaj.art-c0e87dca2dc74fd48934d9db5e9af1a3 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-04-11T13:36:49Z |
| publishDate | 2016-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-c0e87dca2dc74fd48934d9db5e9af1a32022-12-22T04:21:26ZengMDPI AGCrystals2073-43522016-09-016911510.3390/cryst6090115cryst6090115The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2Luojun Du0Hua Yu1Li Xie2Shuang Wu3Shuopei Wang4Xiaobo Lu5Mengzhou Liao6Jianling Meng7Jing Zhao8Jing Zhang9Jianqi Zhu10Peng Chen11Guole Wang12Rong Yang13Dongxia Shi14Guangyu Zhang15Department of Physics, Renmin University of China, Beijing 100872, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaBeijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, ChinaTheoretical calculation and experimental measurement have shown that twin grain boundary (GB) of molybdenum disulphide (MoS2) exhibits extraordinary effects on transport properties. Precise transport measurements need to verify the transport mechanism of twin GB in MoS2. Here, monolayer molybdenum disulphide with a twin grain boundary was grown in our developed low-pressure chemical vapor deposition (CVD) system, and we investigated how the twin GB affects the electrical transport properties of MoS2 by temperature-dependent transport studies. At low temperature, the twin GB can increase the in-plane electrical conductivity of MoS2 and the transport exhibits variable-range hopping (VRH), while at high temperature, the twin GB impedes the electrical transport of MoS2 and the transport exhibits nearest-neighbor hopping (NNH). Our results elucidate carrier transport mechanism of twin GB and give an important indication of twin GB in tailoring the electronic properties of MoS2 for its applications in next-generation electronics and optoelectronic devices.http://www.mdpi.com/2073-4352/6/9/115molybdenum disulphidechemical vapor depositiontwin grain boundaryvariable-range hoppingnearest-neighbour hopping |
| spellingShingle | Luojun Du Hua Yu Li Xie Shuang Wu Shuopei Wang Xiaobo Lu Mengzhou Liao Jianling Meng Jing Zhao Jing Zhang Jianqi Zhu Peng Chen Guole Wang Rong Yang Dongxia Shi Guangyu Zhang The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2 Crystals molybdenum disulphide chemical vapor deposition twin grain boundary variable-range hopping nearest-neighbour hopping |
| title | The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2 |
| title_full | The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2 |
| title_fullStr | The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2 |
| title_full_unstemmed | The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2 |
| title_short | The Effect of Twin Grain Boundary Tuned by Temperature on the Electrical Transport Properties of Monolayer MoS2 |
| title_sort | effect of twin grain boundary tuned by temperature on the electrical transport properties of monolayer mos2 |
| topic | molybdenum disulphide chemical vapor deposition twin grain boundary variable-range hopping nearest-neighbour hopping |
| url | http://www.mdpi.com/2073-4352/6/9/115 |
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