GaN Monolithic PWM Generator With Dynamic Offset Compensation
The first fully integrated GaN pulse width modulation (PWM) generator for power conversion applications is presented in this paper. The solution is implemented in a 0.5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> technolog...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/10314527/ |
| _version_ | 1827650413502922752 |
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| author | Katia Samperi Nunzio Spina Alessandro Castorina Antoine Pavlin Salvatore Pennisi Giuseppe Palmisano |
| author_facet | Katia Samperi Nunzio Spina Alessandro Castorina Antoine Pavlin Salvatore Pennisi Giuseppe Palmisano |
| author_sort | Katia Samperi |
| collection | DOAJ |
| description | The first fully integrated GaN pulse width modulation (PWM) generator for power conversion applications is presented in this paper. The solution is implemented in a 0.5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> technology, avoiding additional pins and external capacitors for sawtooth signal generation while providing high accuracy. Indeed, the large GaN process spreads are addressed through an innovative dynamic offset compensation approach whose clock signal takes advantage of the PWM signal itself. The proposed PWM generator adopts a 6-V power supply and includes a 25 digital divider to set the PWM frequency at 500 kHz and the minimum and maximum duty cycles at 6% and 94%, respectively. Experimental results on integrated prototypes validated the correct circuit functionality over the temperature range from −40°C to 120°C. As a main achievement, this work demonstrates effective all-GaN integration of complex mixed analog and digital circuits, thus representing a significant advancement in the approaches to overcome the main limitations of GaN devices and enable fully integrated signal processing implementation. |
| first_indexed | 2024-03-09T20:15:51Z |
| format | Article |
| id | doaj.art-c0f4fcfa81064ec3ad579617a62c2596 |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-03-09T20:15:51Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-c0f4fcfa81064ec3ad579617a62c25962023-11-24T00:02:25ZengIEEEIEEE Access2169-35362023-01-011112689212689910.1109/ACCESS.2023.333203110314527GaN Monolithic PWM Generator With Dynamic Offset CompensationKatia Samperi0https://orcid.org/0000-0002-6009-7815Nunzio Spina1https://orcid.org/0000-0002-3636-096XAlessandro Castorina2https://orcid.org/0009-0003-7299-733XAntoine Pavlin3Salvatore Pennisi4https://orcid.org/0000-0002-5803-484XGiuseppe Palmisano5https://orcid.org/0000-0002-6703-4438Department of Electrical Electronic and Computer Engineering, University of Catania, Catania, ItalySTMicroelectronics, Catania, ItalySTMicroelectronics, Catania, ItalySTMicroelectronics, Rousset, FranceDepartment of Electrical Electronic and Computer Engineering, University of Catania, Catania, ItalyDepartment of Electrical Electronic and Computer Engineering, University of Catania, Catania, ItalyThe first fully integrated GaN pulse width modulation (PWM) generator for power conversion applications is presented in this paper. The solution is implemented in a 0.5-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> technology, avoiding additional pins and external capacitors for sawtooth signal generation while providing high accuracy. Indeed, the large GaN process spreads are addressed through an innovative dynamic offset compensation approach whose clock signal takes advantage of the PWM signal itself. The proposed PWM generator adopts a 6-V power supply and includes a 25 digital divider to set the PWM frequency at 500 kHz and the minimum and maximum duty cycles at 6% and 94%, respectively. Experimental results on integrated prototypes validated the correct circuit functionality over the temperature range from −40°C to 120°C. As a main achievement, this work demonstrates effective all-GaN integration of complex mixed analog and digital circuits, thus representing a significant advancement in the approaches to overcome the main limitations of GaN devices and enable fully integrated signal processing implementation.https://ieeexplore.ieee.org/document/10314527/GaN Pulse width modulation generatorGaN ICsGaN power convertersGaN control circuitGaN technology |
| spellingShingle | Katia Samperi Nunzio Spina Alessandro Castorina Antoine Pavlin Salvatore Pennisi Giuseppe Palmisano GaN Monolithic PWM Generator With Dynamic Offset Compensation IEEE Access GaN Pulse width modulation generator GaN ICs GaN power converters GaN control circuit GaN technology |
| title | GaN Monolithic PWM Generator With Dynamic Offset Compensation |
| title_full | GaN Monolithic PWM Generator With Dynamic Offset Compensation |
| title_fullStr | GaN Monolithic PWM Generator With Dynamic Offset Compensation |
| title_full_unstemmed | GaN Monolithic PWM Generator With Dynamic Offset Compensation |
| title_short | GaN Monolithic PWM Generator With Dynamic Offset Compensation |
| title_sort | gan monolithic pwm generator with dynamic offset compensation |
| topic | GaN Pulse width modulation generator GaN ICs GaN power converters GaN control circuit GaN technology |
| url | https://ieeexplore.ieee.org/document/10314527/ |
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