Investigation on Synaptic Adaptation and Fatigue in ZnO/HfZrO-Based Memristors under Continuous Electrical Pulse Stimulation

Investigation on Synaptic Adaptation and Fatigue in ZnO/HfZrO-Based Memristors under Continuous Electrical Pulse Stimulation

This study investigates the behavior of memristive devices characterized by oxygen-deficient ZnO and HfZrO films under continuous pulse stimulation. This dynamic reflects the adaptability observed in neural synapses when repeatedly subjected to stress, ultimately resulting in a mitigated response to...

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Bibliographic Details
Main Authors:	Zeyang Xiang, Kexiang Wang, Jie Lu, Zixuan Wang, Huilin Jin, Ranping Li, Mengrui Shi, Liuxuan Wu, Fuyu Yan, Ran Jiang
Format:	Article
Language:	English
Published:	MDPI AG 2024-03-01
Series:	Electronics
Subjects:	memristor synaptic behavior polarization electrical stimulation
Online Access:	https://www.mdpi.com/2079-9292/13/6/1148

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