Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric
Multilayer two-dimensional molybdenum disulfide (MoS2) field-effect transistors with Al2O3 or HfO2 as top gate dielectric and bottom passivation layer have been comparatively studied. The top-gated MoS2 transistor with Al2O3 as both top gate dielectric and bottom passivation layer exhibits excellent...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5119913 |
| _version_ | 1818300904558821376 |
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| author | Jiyue Zou Lisheng Wang Fengxiang Chen |
| author_facet | Jiyue Zou Lisheng Wang Fengxiang Chen |
| author_sort | Jiyue Zou |
| collection | DOAJ |
| description | Multilayer two-dimensional molybdenum disulfide (MoS2) field-effect transistors with Al2O3 or HfO2 as top gate dielectric and bottom passivation layer have been comparatively studied. The top-gated MoS2 transistor with Al2O3 as both top gate dielectric and bottom passivation layer exhibits excellent electrical characteristics with an on-off ratio of ∼106, a subthreshold swing of 97 mV dec−1, a low interface-trap density of 1.66×1012 cm−2eV−1, and a high field-effect mobility of 105 cm2 V−1 s−1. All these should be attributed to superior interface quality between Al2O3 top gate dielectric and MoS2, and enhanced dielectric screening effect due to Al2O3 bottom passivation layer. |
| first_indexed | 2024-12-13T05:14:32Z |
| format | Article |
| id | doaj.art-c1092f813d4e4089b6dedf50df99ff89 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-13T05:14:32Z |
| publishDate | 2019-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-c1092f813d4e4089b6dedf50df99ff892022-12-21T23:58:28ZengAIP Publishing LLCAIP Advances2158-32262019-09-0199095061095061-510.1063/1.5119913085909ADVImproved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectricJiyue Zou0Lisheng Wang1Fengxiang Chen2School of Information Engineering, Wuhan University of Technology, Wuhan 430070, ChinaDepartment of Physics Science and Technology, School of Science, Wuhan University of Technology, Wuhan 430070, ChinaDepartment of Physics Science and Technology, School of Science, Wuhan University of Technology, Wuhan 430070, ChinaMultilayer two-dimensional molybdenum disulfide (MoS2) field-effect transistors with Al2O3 or HfO2 as top gate dielectric and bottom passivation layer have been comparatively studied. The top-gated MoS2 transistor with Al2O3 as both top gate dielectric and bottom passivation layer exhibits excellent electrical characteristics with an on-off ratio of ∼106, a subthreshold swing of 97 mV dec−1, a low interface-trap density of 1.66×1012 cm−2eV−1, and a high field-effect mobility of 105 cm2 V−1 s−1. All these should be attributed to superior interface quality between Al2O3 top gate dielectric and MoS2, and enhanced dielectric screening effect due to Al2O3 bottom passivation layer.http://dx.doi.org/10.1063/1.5119913 |
| spellingShingle | Jiyue Zou Lisheng Wang Fengxiang Chen Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric AIP Advances |
| title | Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric |
| title_full | Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric |
| title_fullStr | Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric |
| title_full_unstemmed | Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric |
| title_short | Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric |
| title_sort | improved performance of top gated multilayer mos2 transistors with channel fully encapsulated by al2o3 dielectric |
| url | http://dx.doi.org/10.1063/1.5119913 |
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