Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric
Multilayer two-dimensional molybdenum disulfide (MoS2) field-effect transistors with Al2O3 or HfO2 as top gate dielectric and bottom passivation layer have been comparatively studied. The top-gated MoS2 transistor with Al2O3 as both top gate dielectric and bottom passivation layer exhibits excellent...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5119913 |