Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric

Improved performance of top-gated multilayer MoS2 transistors with channel fully encapsulated by Al2O3 dielectric

Multilayer two-dimensional molybdenum disulfide (MoS2) field-effect transistors with Al2O3 or HfO2 as top gate dielectric and bottom passivation layer have been comparatively studied. The top-gated MoS2 transistor with Al2O3 as both top gate dielectric and bottom passivation layer exhibits excellent...

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Bibliographic Details
Main Authors: Jiyue Zou, Lisheng Wang, Fengxiang Chen
Format: Article
Language:English
Published: AIP Publishing LLC 2019-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5119913

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