Study of Flow Pattern Defects and Oxidation Induced Stacking Faults in Czochralski Single-Crystal Silicon Growth
This paper emphasizes that the furnace pressure, crucible rotation, and pulling rate have important effects on interstitial oxygen (<i>O<sub>i</sub></i>) concentrations and micro-defects during growth in a Czochralski single-crystal silicon (CZ-Si) growth furnace. Since oxyge...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-02-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/13/2/336 |