Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure
A type-II (with broken bandgap) W-shaped nano-heterostructure having layers combination of AlSb, InAs and GaAsSb compound semiconductors has been proposed which can be utilized as high intensity lasing source in MIR (mid infrared region). For this heterostructure, a multiband band k.p Hamiltonian ha...
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| Format: | Article |
| Language: | English |
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Elsevier
2021-12-01
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| Series: | Results in Optics |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666950121000869 |
| _version_ | 1819006095859908608 |
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| author | Syed Firoz Haider Upendra Kumar Sandhya Kattayat Smitha Josey M. Ayaz Ahmad Saral K. Gupta Rakesh Sharma Mohammed Ezzeldien P.A. Alvi |
| author_facet | Syed Firoz Haider Upendra Kumar Sandhya Kattayat Smitha Josey M. Ayaz Ahmad Saral K. Gupta Rakesh Sharma Mohammed Ezzeldien P.A. Alvi |
| author_sort | Syed Firoz Haider |
| collection | DOAJ |
| description | A type-II (with broken bandgap) W-shaped nano-heterostructure having layers combination of AlSb, InAs and GaAsSb compound semiconductors has been proposed which can be utilized as high intensity lasing source in MIR (mid infrared region). For this heterostructure, a multiband band k.p Hamiltonian has been simplified to compute the required carrier’s wavefunctions, their subband structures and matrix dipole elements accountable for the probabilistic transitions which results into the high optical gain. For 2-D charge carrier density of 1.5 × 1012 cm−2, the computed results confirm that only the light hole (LH) subbands take part in optical transition in order to produce the high optical gain of the order of ~8850 /cm which corresponds to ~5.2 µm. Keeping in view its high optical gain at ~5.2 µm, the proposed type-II AlSb/InAs/GaAsSb heterostructure can be useful in the environmental monitoring, particularly important for sensing the CO2, CO and NO toxic gases available in the polluted environment. Moreover, this type-II heterostructure can also play an important role in traditional applications such as industrial, medical, MIR spectroscopy, and telecommunications applications which require ~5200 nm wavelength. |
| first_indexed | 2024-12-21T00:03:14Z |
| format | Article |
| id | doaj.art-c11bada68676484497958ec487e08def |
| institution | Directory Open Access Journal |
| issn | 2666-9501 |
| language | English |
| last_indexed | 2024-12-21T00:03:14Z |
| publishDate | 2021-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Optics |
| spelling | doaj.art-c11bada68676484497958ec487e08def2022-12-21T19:22:34ZengElsevierResults in Optics2666-95012021-12-015100138Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructureSyed Firoz Haider0Upendra Kumar1Sandhya Kattayat2Smitha Josey3M. Ayaz Ahmad4Saral K. Gupta5Rakesh Sharma6Mohammed Ezzeldien7P.A. Alvi8Department of Physics, Banasthali Vidyapith, Banasthali 304022, Rajasthan, IndiaDepartment of Applied Sciences, IIIT Allahabad, Prayagraj 211015, UP, IndiaHigher Colleges of Technology, Abu Dhabi, UAEHigher Colleges of Technology, Sharjah, P.O. Box: 7947, UAEDepartment of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, 71491, Saudi ArabiaDepartment of Physics, Banasthali Vidyapith, Banasthali 304022, Rajasthan, IndiaDepartment of Physics, National Defence Academy, Khadagwasla, Pune 411023, Maharashtra, IndiaDepartment of Basic Sciences, Common First Year Deanship, Jouf University, P.O. Box: 2014, Sakaka, Saudi Arabia; Metallurgy & Material Science Tests (MMST) Lab, Department of Physics, Faculty of Science, South Valley University, EgyptDepartment of Physics, Banasthali Vidyapith, Banasthali 304022, Rajasthan, India; Corresponding author.A type-II (with broken bandgap) W-shaped nano-heterostructure having layers combination of AlSb, InAs and GaAsSb compound semiconductors has been proposed which can be utilized as high intensity lasing source in MIR (mid infrared region). For this heterostructure, a multiband band k.p Hamiltonian has been simplified to compute the required carrier’s wavefunctions, their subband structures and matrix dipole elements accountable for the probabilistic transitions which results into the high optical gain. For 2-D charge carrier density of 1.5 × 1012 cm−2, the computed results confirm that only the light hole (LH) subbands take part in optical transition in order to produce the high optical gain of the order of ~8850 /cm which corresponds to ~5.2 µm. Keeping in view its high optical gain at ~5.2 µm, the proposed type-II AlSb/InAs/GaAsSb heterostructure can be useful in the environmental monitoring, particularly important for sensing the CO2, CO and NO toxic gases available in the polluted environment. Moreover, this type-II heterostructure can also play an important role in traditional applications such as industrial, medical, MIR spectroscopy, and telecommunications applications which require ~5200 nm wavelength.http://www.sciencedirect.com/science/article/pii/S2666950121000869InAsAlSbGaAsSbQW heterostructureOptical gainMIR region |
| spellingShingle | Syed Firoz Haider Upendra Kumar Sandhya Kattayat Smitha Josey M. Ayaz Ahmad Saral K. Gupta Rakesh Sharma Mohammed Ezzeldien P.A. Alvi Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure Results in Optics InAs AlSb GaAsSb QW heterostructure Optical gain MIR region |
| title | Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure |
| title_full | Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure |
| title_fullStr | Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure |
| title_full_unstemmed | Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure |
| title_short | Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure |
| title_sort | investigation of high optical gain mir region in alsb inas gaassb type ii quantum well heterostructure |
| topic | InAs AlSb GaAsSb QW heterostructure Optical gain MIR region |
| url | http://www.sciencedirect.com/science/article/pii/S2666950121000869 |
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