Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure

Investigation of high optical gain (MIR region) in AlSb/InAs/GaAsSb type-II quantum well heterostructure

A type-II (with broken bandgap) W-shaped nano-heterostructure having layers combination of AlSb, InAs and GaAsSb compound semiconductors has been proposed which can be utilized as high intensity lasing source in MIR (mid infrared region). For this heterostructure, a multiband band k.p Hamiltonian ha...

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Bibliographic Details
Main Authors: Syed Firoz Haider, Upendra Kumar, Sandhya Kattayat, Smitha Josey, M. Ayaz Ahmad, Saral K. Gupta, Rakesh Sharma, Mohammed Ezzeldien, P.A. Alvi
Format: Article
Language:English
Published: Elsevier 2021-12-01
Series:Results in Optics
Subjects:
InAs
AlSb
GaAsSb
QW heterostructure
Optical gain
MIR region
Online Access:http://www.sciencedirect.com/science/article/pii/S2666950121000869

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