Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

Influence of dislocations on indium diffusion in semi-polar InGaN/GaN heterostructures

The spatial distribution of indium composition in InGaN/GaN heterostructure is a critical topic for modulating the wavelength of light emitting diodes. In this letter, semi-polar InGaN/GaN heterostructure stripes were fabricated on patterned GaN/Sapphire substrates by epitaxial lateral overgrowth (E...

Full description

Bibliographic Details
Main Authors:	Yao Yin, Huabin Sun, Liwen Sang, Peng Chen, Youdou Zheng, Benjamin Dierre, Masatomo Sumiya, Yi Shi, Takashi Sekiguchi
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2015-05-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.4921207

Similar Items

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
by: Haruka Matsuura, et al.
Published: (2019-04-01)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)

The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures
by: Yusof, Ahmad Sauffi, et al.
Published: (2020)

Deep-level defects related to the emissive pits in thick InGaN films on GaN template and bulk substrates
by: Masatomo Sumiya, et al.
Published: (2017-01-01)

Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
by: Liwen Cheng, et al.
Published: (2021-08-01)

Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
by: Samsudin, M. E. A., et al.
Published: (2019)

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD
by: Hartono, Haryono, et al.
Published: (2004)

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content
by: I. G. Vasileiadis, et al.
Published: (2021-10-01)

Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces
by: Basanta Roul, et al.
Published: (2015-03-01)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
by: Kyaw, Zabu, et al.
Published: (2014)

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
by: Zhang, Xueliang, et al.
Published: (2014)

Growth modes in heteroepitaxy of InGaN on GaN
by: Oliver, R, et al.
Published: (2005)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
by: Sun, Xiaowei, et al.
Published: (2013)

Effect of InGaN/GaN superlattice as underlayer on characteristics of AlGaN/GaN HEMT
by: Hideyuki Itakura, et al.
Published: (2020-02-01)

Piezoelectric relaxation of two-dimentional electron gas in InGaN/GaN heterostructures with quantum wells
by: Evgeny R. Burmistrov, et al.
Published: (2021-07-01)

Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
by: Zhang, Zi-Hui, et al.
Published: (2013)

Vertical-Type Ni/GaN UV Photodetectors Fabricated on Free-Standing GaN Substrates
by: Bing Ren, et al.
Published: (2019-07-01)

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epliayers Grown on Sapphire
by: Song, T.L., et al.
Published: (2003)

Graded InGaN Buffers for Strain Relaxation in GaN/InGaN Epilayers Grown on sapphire
by: Chua, Soo-Jin, et al.
Published: (2003)

Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
by: Pierre Lottigier, et al.
Published: (2023-09-01)

Transition from Screw-Type to Edge-Type Misfit Dislocations at InGaN/GaN Heterointerfaces
by: Quantong Li, et al.
Published: (2023-06-01)

Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes
by: Ting Zhi, et al.
Published: (2015-08-01)

Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures.
by: Ahmed Mohamed, et al.
Published: (2019-01-01)

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
by: Mikolaj Grabowski, et al.
Published: (2021-01-01)

Effect of size and indium-composition on linear and nonlinear optical absorption of InGaN/GaN lens-shaped quantum dot
by: Jbara, Ahmed S., et al.
Published: (2016)

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells
by: Xuan Li, et al.
Published: (2021-04-01)

Luminescence properties of isolated InGaN/GaN quantum dots
by: Martin, R, et al.
Published: (2005)

Carrier localization mechanisms in InGaN/GaN quantum wells
by: Watson-Parris, D, et al.
Published: (2011)

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
by: Oliver, R, et al.
Published: (2004)

Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations
by: Zhi Ting Ye, et al.
Published: (2019-06-01)

Effect of InGaN thickness on assisted trap recombination and behaviour of InGaN/AlGaN double heterostructure LED
by: Rashid Shanise, et al.
Published: (2017-01-01)

Insight into the impact of atomic- and nano-scale indium distributions on the optical properties of InGaN/GaN quantum well structures grown on m-plane freestanding GaN substrates
by: Tang, F, et al.
Published: (2019)

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells
by: Wei Liu, et al.
Published: (2023-08-01)

Selective self-assembly and characterization of GaN nanopyramids on m-plane InGaN/GaN quantum disks.
by: Park, Y, et al.
Published: (2012)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
by: Wang Yongjin, et al.
Published: (2011-01-01)

Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns
by: Takao Oto, et al.
Published: (2016-11-01)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods
by: Park, Y, et al.
Published: (2018)

InGaN/GaN light-emitting diode with a polarization tunnel junction
by: Zhang, Zi-Hui, et al.
Published: (2013)

Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate
by: Teng Jiang, et al.
Published: (2016-03-01)

Spatial and time-resolved properties of emission enhancement in polar/semi-polar InGaN/GaN by surface plasmon resonance
by: Ikeda Kento, et al.
Published: (2024-02-01)