Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.
Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Public Library of Science (PLoS)
2016-01-01
|
| Series: | PLoS ONE |
| Online Access: | http://europepmc.org/articles/PMC4723132?pdf=render |
| _version_ | 1818949270899785728 |
|---|---|
| author | Hassan Maktuff Jaber Al-Ta'ii Vengadesh Periasamy Yusoff Mohd Amin |
| author_facet | Hassan Maktuff Jaber Al-Ta'ii Vengadesh Periasamy Yusoff Mohd Amin |
| author_sort | Hassan Maktuff Jaber Al-Ta'ii |
| collection | DOAJ |
| description | Deoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor. |
| first_indexed | 2024-12-20T09:00:02Z |
| format | Article |
| id | doaj.art-c146afff326c4f8a826b00a67017707f |
| institution | Directory Open Access Journal |
| issn | 1932-6203 |
| language | English |
| last_indexed | 2024-12-20T09:00:02Z |
| publishDate | 2016-01-01 |
| publisher | Public Library of Science (PLoS) |
| record_format | Article |
| series | PLoS ONE |
| spelling | doaj.art-c146afff326c4f8a826b00a67017707f2022-12-21T19:45:53ZengPublic Library of Science (PLoS)PLoS ONE1932-62032016-01-01111e014542310.1371/journal.pone.0145423Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor.Hassan Maktuff Jaber Al-Ta'iiVengadesh PeriasamyYusoff Mohd AminDeoxyribonucleic acid or DNA molecules expressed as double-stranded (DSS) negatively charged polymer plays a significant role in electronic states of metal/silicon semiconductor structures. Electrical parameters of an Au/DNA/ITO device prepared using self-assembly method was studied by using current-voltage (I-V) characteristic measurements under alpha bombardment at room temperature. The results were analyzed using conventional thermionic emission model, Cheung and Cheung's method and Norde's technique to estimate the barrier height, ideality factor, series resistance and Richardson constant of the Au/DNA/ITO structure. Besides demonstrating a strongly rectifying (diode) characteristic, it was also observed that orderly fluctuations occur in various electrical parameters of the Schottky structure. Increasing alpha radiation effectively influences the series resistance, while the barrier height, ideality factor and interface state density parameters respond linearly. Barrier height determined from I-V measurements were calculated at 0.7284 eV for non-radiated, increasing to about 0.7883 eV in 0.036 Gy showing an increase for all doses. We also demonstrate the hypersensitivity phenomena effect by studying the relationship between the series resistance for the three methods, the ideality factor and low-dose radiation. Based on the results, sensitive alpha particle detectors can be realized using Au/DNA/ITO Schottky junction sensor.http://europepmc.org/articles/PMC4723132?pdf=render |
| spellingShingle | Hassan Maktuff Jaber Al-Ta'ii Vengadesh Periasamy Yusoff Mohd Amin Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor. PLoS ONE |
| title | Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor. |
| title_full | Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor. |
| title_fullStr | Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor. |
| title_full_unstemmed | Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor. |
| title_short | Electronic Characterization of Au/DNA/ITO Metal-Semiconductor-Metal Diode and Its Application as a Radiation Sensor. |
| title_sort | electronic characterization of au dna ito metal semiconductor metal diode and its application as a radiation sensor |
| url | http://europepmc.org/articles/PMC4723132?pdf=render |
| work_keys_str_mv | AT hassanmaktuffjaberaltaii electroniccharacterizationofaudnaitometalsemiconductormetaldiodeanditsapplicationasaradiationsensor AT vengadeshperiasamy electroniccharacterizationofaudnaitometalsemiconductormetaldiodeanditsapplicationasaradiationsensor AT yusoffmohdamin electroniccharacterizationofaudnaitometalsemiconductormetaldiodeanditsapplicationasaradiationsensor |