Enhanced electroresistance endurance of capped Hf0.5Zr0.5O2 ultrathin epitaxial tunnel barriers
Electroresistance in ultrathin Hf0.5Zr0.5O2 (HZO) films is pivotal toward the implementation of hafnia-based ferroelectrics in electronics. Here, we show that the electroresistance yield and endurance of large capacitors (∼314 µm2) of epitaxial HZO films only 2.2 nm thick grown on SrTiO3 or GdScO3 c...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2022-03-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0076865 |
| Summary: | Electroresistance in ultrathin Hf0.5Zr0.5O2 (HZO) films is pivotal toward the implementation of hafnia-based ferroelectrics in electronics. Here, we show that the electroresistance yield and endurance of large capacitors (∼314 µm2) of epitaxial HZO films only 2.2 nm thick grown on SrTiO3 or GdScO3 can be improved using 1 nm SrTiO3 capping layers. It is argued that the main role of the capping layer is to minimize charge transport along grain boundaries, and, thus, a similar strategy can be explored in polycrystalline films. |
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| ISSN: | 2166-532X |