Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector
In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime val...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-09-01
|
| Series: | Photonics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2304-6732/7/3/76 |
| _version_ | 1797553336731303936 |
|---|---|
| author | U. Zavala-Moran M. Bouschet J. P. Perez R. Alchaar S. Bernhardt I. Ribet-Mohamed F. de Anda-Salazar P. Christol |
| author_facet | U. Zavala-Moran M. Bouschet J. P. Perez R. Alchaar S. Bernhardt I. Ribet-Mohamed F. de Anda-Salazar P. Christol |
| author_sort | U. Zavala-Moran |
| collection | DOAJ |
| description | In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 µm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10<sup>−5</sup> A/cm<sup>2</sup> at 150 K is reported on the corresponding device exhibiting a 50% cut-off wavelength around 5 µm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes. |
| first_indexed | 2024-03-10T16:13:55Z |
| format | Article |
| id | doaj.art-c1721a7715464a4c892c1cae087a9448 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-10T16:13:55Z |
| publishDate | 2020-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-c1721a7715464a4c892c1cae087a94482023-11-20T14:14:15ZengMDPI AGPhotonics2304-67322020-09-01737610.3390/photonics7030076Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier PhotodetectorU. Zavala-Moran0M. Bouschet1J. P. Perez2R. Alchaar3S. Bernhardt4I. Ribet-Mohamed5F. de Anda-Salazar6P. Christol7IICO, Univ. Autónoma de San Luis Potosí, Av. Karakorum 1470, San Luis Potosí CP 78210, MexicoIES, Univ. Montpellier, CNRS, F-34000 Montpellier, FranceIES, Univ. Montpellier, CNRS, F-34000 Montpellier, FranceIES, Univ. Montpellier, CNRS, F-34000 Montpellier, FranceONERA, Chemin de la Hunière, F-91761 Palaiseau, FranceONERA, Chemin de la Hunière, F-91761 Palaiseau, FranceIICO, Univ. Autónoma de San Luis Potosí, Av. Karakorum 1470, San Luis Potosí CP 78210, MexicoIES, Univ. Montpellier, CNRS, F-34000 Montpellier, FranceIn this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime value equal to 1 µs at 80 K, carried out on dedicated structure showing photoluminescence peak position at 4.9 µm, is extracted from a time resolved photoluminescence measurement. Dark current density as low as 3.2 × 10<sup>−5</sup> A/cm<sup>2</sup> at 150 K is reported on the corresponding device exhibiting a 50% cut-off wavelength around 5 µm. A performance analysis through normalized spectral response and dark current density-voltage characteristics was performed to determine both the operating bias and the different dark current regimes.https://www.mdpi.com/2304-6732/7/3/76midwave infrared quantum detectorbarrier structurega-free type-II superlattice |
| spellingShingle | U. Zavala-Moran M. Bouschet J. P. Perez R. Alchaar S. Bernhardt I. Ribet-Mohamed F. de Anda-Salazar P. Christol Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector Photonics midwave infrared quantum detector barrier structure ga-free type-II superlattice |
| title | Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector |
| title_full | Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector |
| title_fullStr | Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector |
| title_full_unstemmed | Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector |
| title_short | Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector |
| title_sort | structural optical and electrical characterizations of midwave infrared ga free type ii inas inassb superlattice barrier photodetector |
| topic | midwave infrared quantum detector barrier structure ga-free type-II superlattice |
| url | https://www.mdpi.com/2304-6732/7/3/76 |
| work_keys_str_mv | AT uzavalamoran structuralopticalandelectricalcharacterizationsofmidwaveinfraredgafreetypeiiinasinassbsuperlatticebarrierphotodetector AT mbouschet structuralopticalandelectricalcharacterizationsofmidwaveinfraredgafreetypeiiinasinassbsuperlatticebarrierphotodetector AT jpperez structuralopticalandelectricalcharacterizationsofmidwaveinfraredgafreetypeiiinasinassbsuperlatticebarrierphotodetector AT ralchaar structuralopticalandelectricalcharacterizationsofmidwaveinfraredgafreetypeiiinasinassbsuperlatticebarrierphotodetector AT sbernhardt structuralopticalandelectricalcharacterizationsofmidwaveinfraredgafreetypeiiinasinassbsuperlatticebarrierphotodetector AT iribetmohamed structuralopticalandelectricalcharacterizationsofmidwaveinfraredgafreetypeiiinasinassbsuperlatticebarrierphotodetector AT fdeandasalazar structuralopticalandelectricalcharacterizationsofmidwaveinfraredgafreetypeiiinasinassbsuperlatticebarrierphotodetector AT pchristol structuralopticalandelectricalcharacterizationsofmidwaveinfraredgafreetypeiiinasinassbsuperlatticebarrierphotodetector |