Structural, Optical and Electrical Characterizations of Midwave Infrared Ga-Free Type-II InAs/InAsSb Superlattice Barrier Photodetector
In this paper, a full set of structural, optical and electrical characterizations performed on midwave infrared barrier detectors based on a Ga-free InAs/InAsSb type-II superlattice, grown by molecular beam epitaxy (MBE) on a GaSb substrate, are reported and analyzed. a Minority carrier lifetime val...
Main Authors: | U. Zavala-Moran, M. Bouschet, J. P. Perez, R. Alchaar, S. Bernhardt, I. Ribet-Mohamed, F. de Anda-Salazar, P. Christol |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-09-01
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Series: | Photonics |
Subjects: | |
Online Access: | https://www.mdpi.com/2304-6732/7/3/76 |
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