Magnetoresistive detection of perpendicular switching in a magnetic insulator

Abstract Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conduc...

Full description

Bibliographic Details
Main Authors: Silvia Damerio, Achintya Sunil, Weronika Janus, M. Mehraeen, Steven S.-L. Zhang, Can O. Avci
Format: Article
Language:English
Published: Nature Portfolio 2024-04-01
Series:Communications Physics
Online Access:https://doi.org/10.1038/s42005-024-01604-x
_version_ 1797219822400962560
author Silvia Damerio
Achintya Sunil
Weronika Janus
M. Mehraeen
Steven S.-L. Zhang
Can O. Avci
author_facet Silvia Damerio
Achintya Sunil
Weronika Janus
M. Mehraeen
Steven S.-L. Zhang
Can O. Avci
author_sort Silvia Damerio
collection DOAJ
description Abstract Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conducting and insulating magnetic layers. However, the electrical readout of magnetization in the latter is inherently difficult, limiting their use in practical applications. Here, we show magnetoresistive detection of perpendicular magnetization reversal in an electrically insulating ferrimagnet, terbium iron garnet (TbIG). To do so, we use TbIG|Cu|TbCo, where TbCo is the reference conducting ferrimagnet and Cu is a nonmagnetic spacer. Current injection through Cu|TbCo allows us to detect the magnetization reversal of TbIG with a simple resistance readout during an external magnetic field sweep. By examining the effect of measurement temperature, TbCo composition, and Cu thickness on the sign and amplitude of the magnetoresistance, we conclude that the spin-dependent electron scattering at the TbIG|Cu interface is the underlying cause. Magnetoresistive detection of perpendicular switching in a ferrimagnetic garnet may enable alternative insulating spintronic device concepts.
first_indexed 2024-04-24T12:39:45Z
format Article
id doaj.art-c1790c53282e4f4ebd0a4ef934583be8
institution Directory Open Access Journal
issn 2399-3650
language English
last_indexed 2024-04-24T12:39:45Z
publishDate 2024-04-01
publisher Nature Portfolio
record_format Article
series Communications Physics
spelling doaj.art-c1790c53282e4f4ebd0a4ef934583be82024-04-07T11:21:02ZengNature PortfolioCommunications Physics2399-36502024-04-01711710.1038/s42005-024-01604-xMagnetoresistive detection of perpendicular switching in a magnetic insulatorSilvia Damerio0Achintya Sunil1Weronika Janus2M. Mehraeen3Steven S.-L. Zhang4Can O. Avci5Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)Department of Physics, Case Western Reserve UniversityInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC)Department of Physics, Case Western Reserve UniversityDepartment of Physics, Case Western Reserve UniversityInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC)Abstract Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conducting and insulating magnetic layers. However, the electrical readout of magnetization in the latter is inherently difficult, limiting their use in practical applications. Here, we show magnetoresistive detection of perpendicular magnetization reversal in an electrically insulating ferrimagnet, terbium iron garnet (TbIG). To do so, we use TbIG|Cu|TbCo, where TbCo is the reference conducting ferrimagnet and Cu is a nonmagnetic spacer. Current injection through Cu|TbCo allows us to detect the magnetization reversal of TbIG with a simple resistance readout during an external magnetic field sweep. By examining the effect of measurement temperature, TbCo composition, and Cu thickness on the sign and amplitude of the magnetoresistance, we conclude that the spin-dependent electron scattering at the TbIG|Cu interface is the underlying cause. Magnetoresistive detection of perpendicular switching in a ferrimagnetic garnet may enable alternative insulating spintronic device concepts.https://doi.org/10.1038/s42005-024-01604-x
spellingShingle Silvia Damerio
Achintya Sunil
Weronika Janus
M. Mehraeen
Steven S.-L. Zhang
Can O. Avci
Magnetoresistive detection of perpendicular switching in a magnetic insulator
Communications Physics
title Magnetoresistive detection of perpendicular switching in a magnetic insulator
title_full Magnetoresistive detection of perpendicular switching in a magnetic insulator
title_fullStr Magnetoresistive detection of perpendicular switching in a magnetic insulator
title_full_unstemmed Magnetoresistive detection of perpendicular switching in a magnetic insulator
title_short Magnetoresistive detection of perpendicular switching in a magnetic insulator
title_sort magnetoresistive detection of perpendicular switching in a magnetic insulator
url https://doi.org/10.1038/s42005-024-01604-x
work_keys_str_mv AT silviadamerio magnetoresistivedetectionofperpendicularswitchinginamagneticinsulator
AT achintyasunil magnetoresistivedetectionofperpendicularswitchinginamagneticinsulator
AT weronikajanus magnetoresistivedetectionofperpendicularswitchinginamagneticinsulator
AT mmehraeen magnetoresistivedetectionofperpendicularswitchinginamagneticinsulator
AT stevenslzhang magnetoresistivedetectionofperpendicularswitchinginamagneticinsulator
AT canoavci magnetoresistivedetectionofperpendicularswitchinginamagneticinsulator