Magnetoresistive detection of perpendicular switching in a magnetic insulator
Abstract Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conduc...
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Format: | Article |
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Nature Portfolio
2024-04-01
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Series: | Communications Physics |
Online Access: | https://doi.org/10.1038/s42005-024-01604-x |
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author | Silvia Damerio Achintya Sunil Weronika Janus M. Mehraeen Steven S.-L. Zhang Can O. Avci |
author_facet | Silvia Damerio Achintya Sunil Weronika Janus M. Mehraeen Steven S.-L. Zhang Can O. Avci |
author_sort | Silvia Damerio |
collection | DOAJ |
description | Abstract Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conducting and insulating magnetic layers. However, the electrical readout of magnetization in the latter is inherently difficult, limiting their use in practical applications. Here, we show magnetoresistive detection of perpendicular magnetization reversal in an electrically insulating ferrimagnet, terbium iron garnet (TbIG). To do so, we use TbIG|Cu|TbCo, where TbCo is the reference conducting ferrimagnet and Cu is a nonmagnetic spacer. Current injection through Cu|TbCo allows us to detect the magnetization reversal of TbIG with a simple resistance readout during an external magnetic field sweep. By examining the effect of measurement temperature, TbCo composition, and Cu thickness on the sign and amplitude of the magnetoresistance, we conclude that the spin-dependent electron scattering at the TbIG|Cu interface is the underlying cause. Magnetoresistive detection of perpendicular switching in a ferrimagnetic garnet may enable alternative insulating spintronic device concepts. |
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id | doaj.art-c1790c53282e4f4ebd0a4ef934583be8 |
institution | Directory Open Access Journal |
issn | 2399-3650 |
language | English |
last_indexed | 2024-04-24T12:39:45Z |
publishDate | 2024-04-01 |
publisher | Nature Portfolio |
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series | Communications Physics |
spelling | doaj.art-c1790c53282e4f4ebd0a4ef934583be82024-04-07T11:21:02ZengNature PortfolioCommunications Physics2399-36502024-04-01711710.1038/s42005-024-01604-xMagnetoresistive detection of perpendicular switching in a magnetic insulatorSilvia Damerio0Achintya Sunil1Weronika Janus2M. Mehraeen3Steven S.-L. Zhang4Can O. Avci5Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)Department of Physics, Case Western Reserve UniversityInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC)Department of Physics, Case Western Reserve UniversityDepartment of Physics, Case Western Reserve UniversityInstitut de Ciència de Materials de Barcelona (ICMAB-CSIC)Abstract Spintronics offers promising routes for efficient memory, logic, and computing technologies. The central challenge in spintronics is electrically manipulating and detecting magnetic states in devices. The electrical control of magnetization via spin-orbit torques is effective in both conducting and insulating magnetic layers. However, the electrical readout of magnetization in the latter is inherently difficult, limiting their use in practical applications. Here, we show magnetoresistive detection of perpendicular magnetization reversal in an electrically insulating ferrimagnet, terbium iron garnet (TbIG). To do so, we use TbIG|Cu|TbCo, where TbCo is the reference conducting ferrimagnet and Cu is a nonmagnetic spacer. Current injection through Cu|TbCo allows us to detect the magnetization reversal of TbIG with a simple resistance readout during an external magnetic field sweep. By examining the effect of measurement temperature, TbCo composition, and Cu thickness on the sign and amplitude of the magnetoresistance, we conclude that the spin-dependent electron scattering at the TbIG|Cu interface is the underlying cause. Magnetoresistive detection of perpendicular switching in a ferrimagnetic garnet may enable alternative insulating spintronic device concepts.https://doi.org/10.1038/s42005-024-01604-x |
spellingShingle | Silvia Damerio Achintya Sunil Weronika Janus M. Mehraeen Steven S.-L. Zhang Can O. Avci Magnetoresistive detection of perpendicular switching in a magnetic insulator Communications Physics |
title | Magnetoresistive detection of perpendicular switching in a magnetic insulator |
title_full | Magnetoresistive detection of perpendicular switching in a magnetic insulator |
title_fullStr | Magnetoresistive detection of perpendicular switching in a magnetic insulator |
title_full_unstemmed | Magnetoresistive detection of perpendicular switching in a magnetic insulator |
title_short | Magnetoresistive detection of perpendicular switching in a magnetic insulator |
title_sort | magnetoresistive detection of perpendicular switching in a magnetic insulator |
url | https://doi.org/10.1038/s42005-024-01604-x |
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