Enhancement of deep violet InGaN double quantum wells laser diodes performance characteristics using superlattice last quantum barrier
Abstract The performance characteristics of InGaN double-quantum-well (DQW) laser diodes (LDs) with different last barrier structures are analyzed numerically by Integrated System Engineering Technical Computer Aided Design (ISE TCAD) software. Three different kind of structures for last quantum bar...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Islamic Azad University, Marvdasht Branch
2021-05-01
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| Series: | Journal of Optoelectronical Nanostructures |
| Subjects: | |
| Online Access: | https://jopn.marvdasht.iau.ir/article_4776_4941a2547e09c61dfc979b5fed25a722.pdf |