A Novel Independently Biased 3-Stack GaN HEMT Configuration for Efficient Design of Microwave Amplifiers
The power amplifier (PA) and low-noise amplifier (LNA) are the most critical components of transceiver systems including radar, mobile communications, satellite communications, etc. While the PA is the key component of the transmitter (TX), the LNA is the key component of the receiver (RX) of the tr...
Main Authors: | Huy Hoang Nguyen, Duy Manh Luong, Gia Duong Bach |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-04-01
|
Series: | Applied Sciences |
Subjects: | |
Online Access: | https://www.mdpi.com/2076-3417/9/7/1510 |
Similar Items
-
5 Watt GaN HEMT Power Amplifier for LTE
by: K. Niotaki, et al.
Published: (2014-04-01) -
A 32-GHz Eight-Way Power Amplifier MMIC in 150 nm GaN HEMT Technology
by: Hyeong-Geun Park, et al.
Published: (2023-07-01) -
Compact 20-W GaN Internally Matched Power Amplifier for 2.5 GHz to 6 GHz Jammer Systems
by: Min-Pyo Lee, et al.
Published: (2020-04-01) -
The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs
by: Meng Zhang, et al.
Published: (2024-01-01) -
6‐GHz‐to‐18‐GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
by: Dong‐Hwan Shin, et al.
Published: (2017-10-01)