11 Level boost inverter topology with dual‐source configuration
Abstract With the advancement of the application of power converters in the power industry, the research towards the prominent power converter namely multilevel inverter has gained a lot of attraction. Here, a dual‐source configured 11 level inverter topology is being discussed, which uses nine powe...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-08-01
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| Series: | IET Power Electronics |
| Online Access: | https://doi.org/10.1049/pel2.12317 |
| Summary: | Abstract With the advancement of the application of power converters in the power industry, the research towards the prominent power converter namely multilevel inverter has gained a lot of attraction. Here, a dual‐source configured 11 level inverter topology is being discussed, which uses nine power semiconductor devices and one capacitor. The proposed topology is able to charge the capacitor up to 2Vdc which provides the boosting feature with the voltage gain of 1.67. An extended comparison with several other topologies has been provided which highlights the major contribution of the work. A low‐power laboratory prototype has been used for the validation of the proposed 11 level topology. Further, a thorough assessment of comparable topologies has been conferred in detail. |
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| ISSN: | 1755-4535 1755-4543 |