Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver
The high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially in high-temperature applications. In this paper...
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| Format: | Article |
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Elsevier
2024-03-01
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| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671123003078 |
| _version_ | 1797256299258314752 |
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| author | Salahaldein Ahmed Pengyu Lai Sudharsan Chinnaiyan Alan Mantooth Zhong Chen |
| author_facet | Salahaldein Ahmed Pengyu Lai Sudharsan Chinnaiyan Alan Mantooth Zhong Chen |
| author_sort | Salahaldein Ahmed |
| collection | DOAJ |
| description | The high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially in high-temperature applications. In this paper, a novel low-cost discrete SMD component gate driver embedded in a SiC MOSFET power module is introduced. A newly integrated packaging structure has been introduced and proved to be efficient in reducing package-related turn-on loss and turn-off parasitic ringing. However, the gate propagation delay and optocoupler on-chip weak output signal in such a structure become limitations for further pushing the operating frequency and the output current level for high-efficiency power conversion. The electrical characterization of low-temperature co-fired ceramic (LTCC) gate drivers is covered. Furthermore, a 1200 V/120A SiC MOSFET phase-leg power module utilizing high-temperature packaging technologies has been developed. The static characteristics, switching performance, and thermal behavior of the fabricated power module are fully evaluated under operating temperature variations of up to 250 °C. |
| first_indexed | 2024-03-08T13:01:36Z |
| format | Article |
| id | doaj.art-c1d95a37e46d4234a868593988cd2516 |
| institution | Directory Open Access Journal |
| issn | 2772-6711 |
| language | English |
| last_indexed | 2024-04-24T22:19:32Z |
| publishDate | 2024-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| spelling | doaj.art-c1d95a37e46d4234a868593988cd25162024-03-20T06:11:45ZengElseviere-Prime: Advances in Electrical Engineering, Electronics and Energy2772-67112024-03-017100412Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driverSalahaldein Ahmed0Pengyu Lai1Sudharsan Chinnaiyan2Alan Mantooth3Zhong Chen4Corresponding author.; The Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USAThe Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USAThe Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USAThe Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USAThe Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, 72701, USAThe high-voltage SiC MOSFET power modules enable high-frequency and high-efficiency power conversion. The parasitic inductances induced by traditional packages of this device technology significantly deteriorate device switching performance, especially in high-temperature applications. In this paper, a novel low-cost discrete SMD component gate driver embedded in a SiC MOSFET power module is introduced. A newly integrated packaging structure has been introduced and proved to be efficient in reducing package-related turn-on loss and turn-off parasitic ringing. However, the gate propagation delay and optocoupler on-chip weak output signal in such a structure become limitations for further pushing the operating frequency and the output current level for high-efficiency power conversion. The electrical characterization of low-temperature co-fired ceramic (LTCC) gate drivers is covered. Furthermore, a 1200 V/120A SiC MOSFET phase-leg power module utilizing high-temperature packaging technologies has been developed. The static characteristics, switching performance, and thermal behavior of the fabricated power module are fully evaluated under operating temperature variations of up to 250 °C.http://www.sciencedirect.com/science/article/pii/S2772671123003078High-temperature (HT) gate driverPower modulePower device packagingHigh-temperature applicationsSilicon carbide MOSFETBJT |
| spellingShingle | Salahaldein Ahmed Pengyu Lai Sudharsan Chinnaiyan Alan Mantooth Zhong Chen Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver e-Prime: Advances in Electrical Engineering, Electronics and Energy High-temperature (HT) gate driver Power module Power device packaging High-temperature applications Silicon carbide MOSFET BJT |
| title | Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver |
| title_full | Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver |
| title_fullStr | Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver |
| title_full_unstemmed | Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver |
| title_short | Electrical and thermal characterization of (250 °C) SiC power module integrated with LTCC-based isolated gate driver |
| title_sort | electrical and thermal characterization of 250 °c sic power module integrated with ltcc based isolated gate driver |
| topic | High-temperature (HT) gate driver Power module Power device packaging High-temperature applications Silicon carbide MOSFET BJT |
| url | http://www.sciencedirect.com/science/article/pii/S2772671123003078 |
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