The Effect of Diluted N<sub>2</sub>O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

The Effect of Diluted N<sub>2</sub>O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

We performed dry oxidation on n-type silicon carbide (SiC), followed by annealing in diluted N<sub>2</sub>O, and subsequently fabricated n-type MOS structures. The study aimed to investigate the impact of different annealing times on the trap charges near the SiC/SiO<sub>2</sub&...

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Bibliographic Details
Main Authors: Zhihua Dong, Leifeng Jiang, Manqi Su, Chunhong Zeng, Hui Liu, Botong Li, Yuhua Sun, Qi Cui, Zhongming Zeng, Baoshun Zhang
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Electronics
Subjects:
silicon carbide
N<sub>2</sub>O
interface states
MOS capacitor
POA
LDMOSFET
Online Access:https://www.mdpi.com/2079-9292/13/3/596

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