150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers
A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (R<sub>on,sp</sub>) of a 150 and 200 V SGT power MOSFE...
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MDPI AG
2020-05-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/11/5/504 |
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| author | Feng-Tso Chien Zhi-Zhe Wang Cheng-Li Lin Tsung-Kuei Kang Chii-Wen Chen Hsien-Chin Chiu |
| author_facet | Feng-Tso Chien Zhi-Zhe Wang Cheng-Li Lin Tsung-Kuei Kang Chii-Wen Chen Hsien-Chin Chiu |
| author_sort | Feng-Tso Chien |
| collection | DOAJ |
| description | A rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (R<sub>on,sp</sub>) of a 150 and 200 V SGT power MOSFET, we used a multiple epitaxies (EPIs) structure to design it and compared other single-EPI and double-EPIs devices based on the same fabrication process. We found that the bottom epitaxial (EPI) layer of a double-EPIs structure can be designed to support the breakdown voltage, and the top one can be adjusted to reduce the R<sub>on,sp</sub>. Therefore, the double-EPIs device has more flexibility to achieve a lower R<sub>on,sp</sub> than the single-EPI one. When the required voltage is over 100 V, the on-state resistance (R<sub>on</sub>) of double-EPIs device is no longer satisfying our expectations. A triple-EPIs structure was designed and studied, to reduce its R<sub>on</sub>, without sacrificing the breakdown voltage. We used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer. The simulated R<sub>on,sp</sub> of a 150 V triple-EPIs device is only 62% and 18.3% of that for the double-EPIs and single-EPI structure, respectively. |
| first_indexed | 2024-03-10T19:47:58Z |
| format | Article |
| id | doaj.art-c1f16233e61b4e2a9b2e97ab8cf71aca |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-10T19:47:58Z |
| publishDate | 2020-05-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-c1f16233e61b4e2a9b2e97ab8cf71aca2023-11-20T00:38:00ZengMDPI AGMicromachines2072-666X2020-05-0111550410.3390/mi11050504150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial LayersFeng-Tso Chien0Zhi-Zhe Wang1Cheng-Li Lin2Tsung-Kuei Kang3Chii-Wen Chen4Hsien-Chin Chiu5Department of Electronic Engineering, Feng Chia University, Taichung 407, TaiwanDepartment of Electronic Engineering, Feng Chia University, Taichung 407, TaiwanDepartment of Electronic Engineering, Feng Chia University, Taichung 407, TaiwanDepartment of Electronic Engineering, Feng Chia University, Taichung 407, TaiwanDepartment of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 304, TaiwanDepartment of Electronic Engineering, Chang Gung University, Taoyuan 333, TaiwanA rating voltage of 150 and 200 V split-gate trench (SGT) power metal-oxide- semiconductor field-effect transistor (Power MOSFET) with different epitaxial layers was proposed and studied. In order to reduce the specific on-resistance (R<sub>on,sp</sub>) of a 150 and 200 V SGT power MOSFET, we used a multiple epitaxies (EPIs) structure to design it and compared other single-EPI and double-EPIs devices based on the same fabrication process. We found that the bottom epitaxial (EPI) layer of a double-EPIs structure can be designed to support the breakdown voltage, and the top one can be adjusted to reduce the R<sub>on,sp</sub>. Therefore, the double-EPIs device has more flexibility to achieve a lower R<sub>on,sp</sub> than the single-EPI one. When the required voltage is over 100 V, the on-state resistance (R<sub>on</sub>) of double-EPIs device is no longer satisfying our expectations. A triple-EPIs structure was designed and studied, to reduce its R<sub>on</sub>, without sacrificing the breakdown voltage. We used an Integrated System Engineering-Technology Computer-Aided Design (ISE-TCAD) simulator to investigate and study the 150 V SGT power MOSFETs with different EPI structures, by modulating the thickness and resistivity of each EPI layer. The simulated R<sub>on,sp</sub> of a 150 V triple-EPIs device is only 62% and 18.3% of that for the double-EPIs and single-EPI structure, respectively.https://www.mdpi.com/2072-666X/11/5/504split-gate trench power MOSFETmultiple epitaxial layersspecific on-resistance |
| spellingShingle | Feng-Tso Chien Zhi-Zhe Wang Cheng-Li Lin Tsung-Kuei Kang Chii-Wen Chen Hsien-Chin Chiu 150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers Micromachines split-gate trench power MOSFET multiple epitaxial layers specific on-resistance |
| title | 150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers |
| title_full | 150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers |
| title_fullStr | 150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers |
| title_full_unstemmed | 150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers |
| title_short | 150–200 V Split-Gate Trench Power MOSFETs with Multiple Epitaxial Layers |
| title_sort | 150 200 v split gate trench power mosfets with multiple epitaxial layers |
| topic | split-gate trench power MOSFET multiple epitaxial layers specific on-resistance |
| url | https://www.mdpi.com/2072-666X/11/5/504 |
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